Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …

Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …

The effect of the asymmetry in carrier concentration and mobility is studied in GaInN pn-
junction light-emitting diodes (LEDs). We propose and present experimental evidence that …

Recently, many groups have focused on the development of GaN-based green LDs to meet
the demand for laser display. Great progresses have been achieved in the past few years …

There is a great deal of interest in the underlying causes of efficiency droop in InGaN/GaN
quantum well light emitting diodes, with several physical mechanisms being put forward to …

Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier
recombination and transport characteristics in semiconductor materials. In this study, the …

We have studied the Mg do** of cubic GaN grown by plasma-assisted Molecular Beam
Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions …

In this paper, we compare and contrast the experimental data and the theoretical predictions
of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well …

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current
density perplexes the development of high-power solid-state lighting. Although the relevant …

Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum
wells (MQWs) emitting at~ 350 nm was achieved via a step quantum well (QW) structure …