An overview of critical applications of resistive random access memory
The rapid advancement of new technologies has resulted in a surge of data, while
conventional computers are nearing their computational limits. The prevalent von Neumann …
conventional computers are nearing their computational limits. The prevalent von Neumann …
Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors
Resistive switching devices based on the Au/Ti/TiO2/Au stack were developed. In addition to
standard electrical characterization by means of I–V curves, scanning thermal microscopy …
standard electrical characterization by means of I–V curves, scanning thermal microscopy …
In Operando Near‐Field Optical Investigation of Memristive Ta2O5 Thin Film Devices with a Graphene Top Electrode
KG Wirth, K Goss, T Heisig… - Advanced Functional …, 2024 - Wiley Online Library
Resistive switching devices based on metal oxides are candidates for nonvolatile memory
storage. They often rely on the valence change mechanism, the field‐induced movement of …
storage. They often rely on the valence change mechanism, the field‐induced movement of …
Scanning Thermal Microscopy Method for Self-Heating in Nonlinear Devices and Application to Filamentary Resistive Random-Access Memory
N Harnack, S Rodehutskors, B Gotsmann - ACS nano, 2025 - ACS Publications
Devices with a highly nonlinear resistance-voltage relationship are candidates for
neuromorphic computing, which can be achieved by highly temperature dependent …
neuromorphic computing, which can be achieved by highly temperature dependent …
Resistive switching modulation by incorporating thermally enhanced layer in HfO2-based memristor
X Li, Z Feng, J Zou, Z Wu, Z Xu, F Yang, Y Zhu… - …, 2023 - iopscience.iop.org
Oxide-based memristors by incorporating thermally enhanced layer (TEL) have showed
great potential in electronic devices for high-efficient and high-density neuromorphic …
great potential in electronic devices for high-efficient and high-density neuromorphic …
Scanning Thermal Microscopy method for self-heating in non-linear devices and application to current filaments in resistive RAM
N Harnack, S Rodehutskors, B Gotsmann - arxiv preprint arxiv …, 2024 - arxiv.org
Resistive RAM (RRAM) devices are candidates for neuromorphic computing devices in
which the functionality lies in the formation and reversible rupture and gap-closing of …
which the functionality lies in the formation and reversible rupture and gap-closing of …
[PDF][PDF] Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors
JB Roldán Aranda, A Cantudo Gómez… - 2024 - digibug.ugr.es
Resistive switching devices based on the Au/Ti/TiO2/Au stack were developed. In addition to
standard electrical characterization by means of I− V curves, scanning thermal microscopy …
standard electrical characterization by means of I− V curves, scanning thermal microscopy …
[PDF][PDF] In Operando Near-Field Optical Investigation of Memristive Ta
Resistive switching memory devices, or resistive random-access memories (ReRAM), are
prime candidates for non-volatile memory applications due to low power consumption …
prime candidates for non-volatile memory applications due to low power consumption …