Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

We present a brief overview of negative bias temperature instability (NBTI) commonly
observed for in p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) …

The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS)
technology to the sub-21-nm technology node is facing great challenges. Innovative …

Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm
and below are benchmarked against equivalent FinFETs. The device performance is …

The paradigm and the usage of CMOS are changing, and so are the requirements at all
levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and …

Electronic bands in crystals can support nontrivial topological textures arising from spin-orbit
interactions, but purely orbital mechanisms can realize closely related dynamics without …

Epitaxial growth is of significant importance over the past decades, given it has been the key
process of modern technology for delivering high-quality thin films. For conventional …

Focusing primarily on silicon-based microelectronics, Defects in Microelectronic Materials
and Devices provides a comprehensive overview of recent progress made in understanding …

Fluctuation limitations on scaling CMOS SRAM cell transistor dimensions and operating
voltages are demonstrated by measuring local stochastic distributions of 65-nm PDSOI …

A simulation framework that couples atomistic electronic structures to Boltzmann transport
formalism is developed and applied to calculate the transport characteristics of thin silicon …