Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …

Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity
at the nanoscale into next-generation memory and logic devices. This is because their …

The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …

Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating
ferroelectric layers and integrating them into complementary metal oxide semiconductor …

The ferroelectric properties and crystal structure of doped HfO 2 thin films were investigated
for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric …

The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …