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Temperature-dependent photoluminescence properties of porous fluorescent SiC
A comprehensive study of surface passivation effect on porous fluorescent silicon carbide
(SiC) was carried out to elucidate the luminescence properties by temperature dependent …
(SiC) was carried out to elucidate the luminescence properties by temperature dependent …
Fluorescent color centers in laser ablated 4H-SiC nanoparticles
Nanostructured and bulk silicon carbide (SiC) has recently emerged as a novel platform for
quantum nanophotonics due to its harboring of paramagnetic color centers, having …
quantum nanophotonics due to its harboring of paramagnetic color centers, having …
Determination of quantum size effect of colloidal SiC quantum dots by cyclic voltammetry
Abstract Colloidal SiC quantum dots (QDs) is a promising material for wavelength
downconversion in optoelectronics and photovoltaics due to their outstanding properties …
downconversion in optoelectronics and photovoltaics due to their outstanding properties …
Imaging with nanometer resolution using optically active defects in silicon carbide
Nanostructured and bulk silicon carbide (Si C) materials are relevant for electronics, nano-
and micromechanical systems, and biosensing applications. Si C has recently emerged as …
and micromechanical systems, and biosensing applications. Si C has recently emerged as …
Asymmetric q-Gaussian functions to fit the Raman LO mode band in Silicon Carbide
AC Sparavigna - 2023 - chemrxiv.org
Previous studies (Sparavigna, 2023) have demonstrated the Tsallis q-Gaussian functions
suitable for the analysis of Raman spectra. Here we consider two asymmetric forms of them …
suitable for the analysis of Raman spectra. Here we consider two asymmetric forms of them …
ZnO nanowire network/4H-SiC heterojunction for improved performance ultraviolet photodetector: the effect of different SiC do** concentrations on photoresponse …
D Kuang, AH Kitai, Z Yu - Materials Today Communications, 2023 - Elsevier
Abstract Zinc Oxide (ZnO) and Silicon Carbide (SiC) are highly promising semiconductors
with their heterostructures offering pathways for the next generation of sensing and detecting …
with their heterostructures offering pathways for the next generation of sensing and detecting …
Enhanced photoconductivity via photon down-conversion by incorporation of solution-processed 3C-SiC QDs on nanostructured black silicon
Colloidal quantum dots (CODs) have attracted attention towards the next-generation
optoelectronic devices capable of tuning the bandgap to capture photons at the UV region …
optoelectronic devices capable of tuning the bandgap to capture photons at the UV region …
Crystal structures and the electronic properties of silicon-rich silicon carbide materials by first principle calculations
Silicon carbide has been used in a variety of applications including solar cells due to its high
stability. The high bandgap of pristine SiC, necessitates nonstoichiometric silicon carbide …
stability. The high bandgap of pristine SiC, necessitates nonstoichiometric silicon carbide …
Highly Reflective Porous Sic with Layered Nanostructures Formed by Electrochemical Etching
Z Ji, Z Gao, T Zhang, A Kitai - Available at SSRN 5022032 - papers.ssrn.com
A highly reflective porous SiC morphology having spontaneously layered nanostructures is
described. It exhibits high reflectance (R> 90%) across most of the visible light range …
described. It exhibits high reflectance (R> 90%) across most of the visible light range …
Quantum confinement effect in 6H-SiC quantum dots observed via plasmon–exciton coupling-induced defect-luminescence quenching
X Guo, Y Zhang, B Fan, J Fan - Applied Physics Letters, 2017 - pubs.aip.org
The quantum confinement effect is one of the crucial physical effects that discriminate a
quantum material from its bulk material. It remains a mystery why the 6H-SiC quantum dots …
quantum material from its bulk material. It remains a mystery why the 6H-SiC quantum dots …