Temperature-dependent photoluminescence properties of porous fluorescent SiC

W Lu, AT Tarekegne, Y Ou, S Kamiyama, H Ou - Scientific reports, 2019 - nature.com
A comprehensive study of surface passivation effect on porous fluorescent silicon carbide
(SiC) was carried out to elucidate the luminescence properties by temperature dependent …

Fluorescent color centers in laser ablated 4H-SiC nanoparticles

S Castelletto, AFM Almutairi, G Thalassinos… - Optics letters, 2017 - opg.optica.org
Nanostructured and bulk silicon carbide (SiC) has recently emerged as a novel platform for
quantum nanophotonics due to its harboring of paramagnetic color centers, having …

Determination of quantum size effect of colloidal SiC quantum dots by cyclic voltammetry

AO Olaoye, M Sani, MDJ Ooi, MH Hussin… - Emergent …, 2024 - Springer
Abstract Colloidal SiC quantum dots (QDs) is a promising material for wavelength
downconversion in optoelectronics and photovoltaics due to their outstanding properties …

Imaging with nanometer resolution using optically active defects in silicon carbide

S Castelletto, M Barbiero, M Charnley, A Boretti… - Physical Review Applied, 2020 - APS
Nanostructured and bulk silicon carbide (Si C) materials are relevant for electronics, nano-
and micromechanical systems, and biosensing applications. Si C has recently emerged as …

Asymmetric q-Gaussian functions to fit the Raman LO mode band in Silicon Carbide

AC Sparavigna - 2023 - chemrxiv.org
Previous studies (Sparavigna, 2023) have demonstrated the Tsallis q-Gaussian functions
suitable for the analysis of Raman spectra. Here we consider two asymmetric forms of them …

ZnO nanowire network/4H-SiC heterojunction for improved performance ultraviolet photodetector: the effect of different SiC do** concentrations on photoresponse …

D Kuang, AH Kitai, Z Yu - Materials Today Communications, 2023 - Elsevier
Abstract Zinc Oxide (ZnO) and Silicon Carbide (SiC) are highly promising semiconductors
with their heterostructures offering pathways for the next generation of sensing and detecting …

Enhanced photoconductivity via photon down-conversion by incorporation of solution-processed 3C-SiC QDs on nanostructured black silicon

AO Olaoye, S Muhammad, MH Hussin… - Materials Research …, 2025 - Elsevier
Colloidal quantum dots (CODs) have attracted attention towards the next-generation
optoelectronic devices capable of tuning the bandgap to capture photons at the UV region …

Crystal structures and the electronic properties of silicon-rich silicon carbide materials by first principle calculations

ND Alkhaldi, SK Barman, MN Huda - Heliyon, 2019 - cell.com
Silicon carbide has been used in a variety of applications including solar cells due to its high
stability. The high bandgap of pristine SiC, necessitates nonstoichiometric silicon carbide …

Highly Reflective Porous Sic with Layered Nanostructures Formed by Electrochemical Etching

Z Ji, Z Gao, T Zhang, A Kitai - Available at SSRN 5022032 - papers.ssrn.com
A highly reflective porous SiC morphology having spontaneously layered nanostructures is
described. It exhibits high reflectance (R> 90%) across most of the visible light range …

Quantum confinement effect in 6H-SiC quantum dots observed via plasmon–exciton coupling-induced defect-luminescence quenching

X Guo, Y Zhang, B Fan, J Fan - Applied Physics Letters, 2017 - pubs.aip.org
The quantum confinement effect is one of the crucial physical effects that discriminate a
quantum material from its bulk material. It remains a mystery why the 6H-SiC quantum dots …