Effects of post‐deposition annealing of cerium oxide passivation layer in nitrogen‐oxygen‐nitrogen ambient
Effects of post‐deposition annealing temperature (400° C, 600° C, 800° C and 1000° C)
onto metal‐organic decomposed cerium oxide (CeO2) precursor spin‐coated on n‐type Si …
onto metal‐organic decomposed cerium oxide (CeO2) precursor spin‐coated on n‐type Si …
Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology
Structural and electrical properties of HfO2 gate-dielectric metal-oxide-semiconductor (MOS)
capacitors deposited by sputtering are investigated. The HfO2 high-k thin films have been …
capacitors deposited by sputtering are investigated. The HfO2 high-k thin films have been …
Synthesis of Different CeO2 Structures on Mesoporous Silica and Characterization of Their Reduction Properties
An investigation was performed to establish the effects of precursor composition on the
structure of ceria deposited onto mesoporous silicas, MCM-41 and SBA-15. The structure of …
structure of ceria deposited onto mesoporous silicas, MCM-41 and SBA-15. The structure of …
Interfacial interaction between cerium oxide and silicon surfaces
F Pagliuca, P Luches, S Valeri - Surface science, 2013 - Elsevier
The interaction of cerium oxide films with Si substrates is investigated by means of X-ray
photoelectron spectroscopy. Cerium oxide films of different thickness have been grown at …
photoelectron spectroscopy. Cerium oxide films of different thickness have been grown at …
Metal-organic decomposed cerium oxide thin film in mixed ambient at different temperatures for MOS capacitor
Post-deposition annealing of CeO 2 thin films in nitrogen/oxygen/nitrogen ambient from 400
until 1000° C successfully transformed the films from oxygen poor to oxygen-rich state, in …
until 1000° C successfully transformed the films from oxygen poor to oxygen-rich state, in …
Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition
WH Kim, WJ Maeng, MK Kim… - Journal of The …, 2011 - iopscience.iop.org
We have systematically investigated the electronic structure of CeO 2 dielectric by plasma
enhanced atomic layer deposition (PE-ALD). The CeO 2 films were deposited by using …
enhanced atomic layer deposition (PE-ALD). The CeO 2 films were deposited by using …
[HTML][HTML] Preparation of High-Performance Transparent Al2O3 Dielectric Films via Self-Exothermic Reaction Based on Solution Method and Applications
As the competition intensifies in enhancing the integration and performance of integrated
circuits, in accordance with the famous Moore's Law, higher performance and smaller size …
circuits, in accordance with the famous Moore's Law, higher performance and smaller size …
Effects of ammonia-ambient annealing on physical and electrical characteristics of rare earth CeO2 as passivation film on silicon
Abstract Effects of post-deposition annealing at 400–1000° C in ammonia (NH 3) gas
ambient towards physical and electrical characteristics of metal-organic decomposition …
ambient towards physical and electrical characteristics of metal-organic decomposition …
Formation of cerium oxide film via post-sputter oxidation of cerium in nitrogen/oxygen/nitrogen ambient
ARM Zabidi, WF Lim - Journal of Alloys and Compounds, 2021 - Elsevier
Bulk cerium film deposited on silicon was transformed into cerium oxide (CeO 2) by post-
sputter oxidation at 400, 600, 800, and 1000° C in nitrogen/oxygen/nitrogen ambient. The …
sputter oxidation at 400, 600, 800, and 1000° C in nitrogen/oxygen/nitrogen ambient. The …
Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering
Effects of different post-deposition annealing (PDA) ambient [O2, N2O, N2, forming gas
(95% N2-5% H2), and Ar] on the physical and metal–oxide–semiconductor (MOS) …
(95% N2-5% H2), and Ar] on the physical and metal–oxide–semiconductor (MOS) …