Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
O Supplie, O Romanyuk, C Koppka, M Steidl… - Progress in Crystal …, 2018 - Elsevier
The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …
since it is strongly desired in various high-efficiency applications ranging from …
Novel two-dimensional AlSb and InSb monolayers with a double-layer honeycomb structure: a first-principles study
In this work, motivated by the fabrication of an AlSb monolayer, we have focused on the
electronic, mechanical and optical properties of AlSb and InSb monolayers with double …
electronic, mechanical and optical properties of AlSb and InSb monolayers with double …
Investigation of vacancy defects and substitutional do** in AlSb monolayer with double layer honeycomb structure: a first-principles calculation
The experimental knowledge of the AlSb monolayer with double layer honeycomb structure
is largely based on the recent publication (Le Qin et al 2021 ACS Nano 15 8184), where this …
is largely based on the recent publication (Le Qin et al 2021 ACS Nano 15 8184), where this …
[HTML][HTML] Strain map** of semiconductor specimens with nm-scale resolution in a transmission electron microscope
The last few years have seen a great deal of progress in the development of transmission
electron microscopy based techniques for strain map**. New techniques have appeared …
electron microscopy based techniques for strain map**. New techniques have appeared …
Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark …
Convergent beam electron diffraction (CBED), nano-beam electron diffraction (NBED or
NBD), high resolution imaging (HRTEM and HRSTEM) and dark field electron holography …
NBD), high resolution imaging (HRTEM and HRSTEM) and dark field electron holography …
Interface lattice displacement measurement to 1 pm by geometric phase analysis on aberration-corrected HAADF STEM images
In this work, the accuracy of geometric phase analysis (GPA) on aberration-corrected high-
angle annular dark-field scanning transmission electron microscopy (Cs-corrected HAADF …
angle annular dark-field scanning transmission electron microscopy (Cs-corrected HAADF …
Combining 2 nm spatial resolution and 0.02% precision for deformation map** of semiconductor specimens in a transmission electron microscope by precession …
Precession electron diffraction has been used to provide accurate deformation maps of a
device structure showing that this technique can provide a spatial resolution of better than 2 …
device structure showing that this technique can provide a spatial resolution of better than 2 …
Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer
The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer
layer were studied by high-angle annular dark-field scanning transmission electron …
layer were studied by high-angle annular dark-field scanning transmission electron …
Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy
Strain fields around grain boundary dislocations are measured by applying geometric phase
analysis on atomic resolution images obtained from multiple fast acquisitions in scanning …
analysis on atomic resolution images obtained from multiple fast acquisitions in scanning …
Quantitative measurement of strain field in strained-channel-transistor arrays by scanning moiré fringe imaging
We have applied scanning moiré fringe (SMF) imaging in scanning transmission electron
microscopy (STEM) to the quantitative measurement of a strain field introduced in p-type …
microscopy (STEM) to the quantitative measurement of a strain field introduced in p-type …