Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors
Y Yang, W Wang, Y Zheng, J You, S Huang… - Applied Physics …, 2021 - pubs.aip.org
The anisotropy of GaN (11-20) makes it possible to fabricate polarized ultraviolet (UV)
photodetectors (PDs) for applications in fields such as remote sensing and airborne …
photodetectors (PDs) for applications in fields such as remote sensing and airborne …
High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors
W Wang, Z Yang, Z Lu, G Li - Journal of Materials Chemistry C, 2018 - pubs.rsc.org
The nonpolar a-plane and m-plane of GaN are anisotropic due to the fact that in-plane
stresses of nonpolar GaN along different directions are varied, which is considered to be the …
stresses of nonpolar GaN along different directions are varied, which is considered to be the …
Effects of Buffer Layer on Structural Properties of Nonpolar (11 2¯ 0)-Plane GaN Film
Nonpolar (11 2¯ 0) a-plane GaN films were grown on semipolar (1 1¯ 02) r-plane sapphire
substrates using various buffer layers within a low-pressure metal organic chemical vapor …
substrates using various buffer layers within a low-pressure metal organic chemical vapor …
Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition
S Wang, J Xu, Y Wang, X Su, Y Zheng… - Crystal Growth & …, 2023 - ACS Publications
Langasite (La3Ga5SiO14, LGS) family crystals are known for their piezoelectric properties,
which make them widely applicable in surface acoustic wave (SAW) devices. The group-III …
which make them widely applicable in surface acoustic wave (SAW) devices. The group-III …
Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN
A Kamarudzaman, ASBA Bakar, A Azman… - Materials Science in …, 2020 - Elsevier
We report the effect of 40 pairs of periodic AlN/GaN multilayers on the a-plane undoped-
gallium nitride (ud-GaN) grown on r-plane flat sapphire substrate via metal-organic chemical …
gallium nitride (ud-GaN) grown on r-plane flat sapphire substrate via metal-organic chemical …
AlN gradient interlayer design for the growth of high-quality AlN epitaxial film on sputtered AlN/sapphire substrate
B Tan, J Hu, J Zhang, Y Zhang, H Long, J Chen, S Du… - …, 2018 - pubs.rsc.org
In this study, we proposed a novel method to grow high-quality AlN films on sputtered
AlN/sapphire substrates by designing an AlN gradient interlayer (GIL-AlN). The epitaxial …
AlN/sapphire substrates by designing an AlN gradient interlayer (GIL-AlN). The epitaxial …
Structural characterization of AlN (11-22) films prepared by sputtering and thermal annealing on m-plane sapphire substrates
Q Feng, Y Ai, Z Liu, Z Yu, K Yang, B Dong… - Superlattices and …, 2020 - Elsevier
Abstract (11-22)-oriented AlN films are sputtered on m-plane sapphire substrates at different
temperatures. With an optimized sputtering temperature of 800° C and high-temperature …
temperatures. With an optimized sputtering temperature of 800° C and high-temperature …
Interface anchored effect on improving working stability of deep ultraviolet light-emitting diode using graphene oxide-based fluoropolymer encapsulant
R Liang, J Dai, L Xu, Y Zhang, J He… - … applied materials & …, 2018 - ACS Publications
The graphene oxide (GO)-based fluoropolymer is first proposed as an interface encapsulant
to improve the light extraction efficiency and achieve the ultralong working stability of deep …
to improve the light extraction efficiency and achieve the ultralong working stability of deep …
Influences of nitridation treatment on the properties of semi-polar (11 2‾ 2) plane AlGaN films
Q Dai, X Zhang, Z Wu - Materials Science in Semiconductor Processing, 2022 - Elsevier
The characteristics of the semi-polar (11 2‾ 2) plane Al 0.34 Ga 0.66 N films grown with
various nitridation time for m-plane substrate were investigated. The characterization results …
various nitridation time for m-plane substrate were investigated. The characterization results …
Electronic transport mechanism for Schottky diodes formed by Au/HVPE a-plane GaN templates grown via in situ GaN nanodot formation
We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor
phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation …
phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation …