Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic
polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great …

This paper reviews the original achievements and advances regarding the field effect
transistor (FET) fabricated from one of the most studied transition metal dichalcogenides: two …

Semiconducting, two-dimensional molybdenum disulfide (MoS2) is considered a promising
new material for highly sensitive photodetection, because of its atomically thin profile and …

Mercury telluride (HgTe) colloidal quantum dots (CQDs) have been developed as promising
materials for the short and mid‐wave infrared photodetection applications because of their …

The commonly observed hysteresis in the transfer characteristics of MoS 2 transistors is
typically associated with charge traps in the gate insulator. Since in Si technologies such …

Tunability and stability in the electrical properties of 2D semiconductors pave the way for
their practical applications in logic devices. A robust layered indium selenide (InSe) field …

A demonstration is presented of how significant improvements in all‐2D photodetectors can
be achieved by exploiting the type‐II band alignment of vertically stacked WS2/MoS2 …

Abstract 2D transition metal dichalcogenides (TMDs) based photodetectors have shown
great potential for the next generation optoelectronics. However, most of the reported MoS2 …

DOI: 10.1002/adma. 201405068 and measured by atomic force microscopy (AFM) as shown
in Figure 1 b, c, the thickness of which is around 6 nm, corresponding to about 9 layers …

Two-dimensional transition metal dichalcogenides (2D TMDCs) offer several attractive
features for use in next-generation electronic and optoelectronic devices. Device …