Electromigration (EM) is a complex multiphysics problem including electrical, thermal, and
mechanical aspects. Since the first work on EM was published in 1907, extensive studies on …

This book provides both the theoretical foundation, as well as the authors' latest
contributions to micromechanics and its applications in nanomechanics, nanocomposites …

Different descriptions used to model a point-defect in an elastic continuum are reviewed.
The emphasis is put on the elastic dipole approximation, which is shown to be equivalent to …

This review provides an overview of the current status of ion-implantation research in silicon,
germanium and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon …

Vacancy formation and migration control self-diffusion in pure crystalline materials, whereas
irradiation produces high concentrations of vacancy and self-interstitial atom defects …

Computational atomic-scale methods continue to provide new information about geometry,
energetics and transition states for interstitial elements in crystalline lattices. This data can …

The hydrostatic pressure dependence of the diffusivity of B and Sb in Si and of B in Si 89 Ge
11 has been measured. The diffusivity of Sb in Si is retarded by pressure, characterized by …

Stress introduces anisotropy in the transport coefficients in materials, affecting diffusion.
Using first-principles quantum-mechanical methods for activation barriers of atomic jumps …

In order to simulate the diffusion kinetics during thermal treatments in SiGe heterostructures,
a physically-based atomistic model including chemical and strain effects has been …

Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …