Recent advances and future prospects for memristive materials, devices, and systems

MK Song, JH Kang, X Zhang, W Ji, A Ascoli… - ACS …, 2023 - ACS Publications
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …

Emerging iontronic neural devices for neuromorphic sensory computing

S Dai, X Liu, Y Liu, Y Xu, J Zhang, Y Wu… - Advanced …, 2023 - Wiley Online Library
Living organisms have a very mysterious and powerful sensory computing system based on
ion activity. Interestingly, studies on iontronic devices in the past few years have proposed a …

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

[LIVRE][B] Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications

D Ielmini, R Waser - 2015 - books.google.com
With its comprehensive coverage, this reference introduces readers to the wide topic of
resistance switching, providing the knowledge, tools, and methods needed to understand …

Quantum conductance in memristive devices: fundamentals, developments, and applications

G Milano, M Aono, L Boarino, U Celano… - Advanced …, 2022 - Wiley Online Library
Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …

Nanobatteries in redox-based resistive switches require extension of memristor theory

I Valov, E Linn, S Tappertzhofen, S Schmelzer… - Nature …, 2013 - nature.com
Redox-based nanoionic resistive memory cells are one of the most promising emerging
nanodevices for future information technology with applications for memory, logic and …

Physics of the switching kinetics in resistive memories

S Menzel, U Böttger, M Wimmer… - Advanced functional …, 2015 - Wiley Online Library
Memristive cells based on different physical effects, that is, phase change, valence change,
and electrochemical processes, are discussed with respect to their potential to overcome the …

On‐demand reconfiguration of nanomaterials: when electronics meets ionics

J Lee, WD Lu - Advanced Materials, 2018 - Wiley Online Library
Rapid advances in the semiconductor industry, driven largely by device scaling, are now
approaching fundamental physical limits and face severe power, performance, and cost …

Prospective of semiconductor memory devices: from memory system to materials

CS Hwang - Advanced Electronic Materials, 2015 - Wiley Online Library
The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining.
The conventional strategy for meeting such demand, ie shrinking of the memory cell size …

Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells

N Onofrio, D Guzman, A Strachan - Nature materials, 2015 - nature.com
Nanoscale resistance-switching cells that operate via the electrochemical formation and
disruption of metallic filaments that bridge two electrodes are among the most promising …