A molecular dynamics simulation with a Tersoff modified potential was used to investigate
the structural features of hollow-core Si nanowires with outer radii of 1.6–3.8 nm at different …

Raman and lateral photoconductivity spectra of self-assembled SiGe nanoislands were
studied with a height of∼ 2 nm and a base of∼ 20 nm formed at a temperature of 500 C. It …

Coulomb charge accumulation and carrier transfer by valence band states of Ge quantum
dots (QDs) embedded in the intrinsic region of Si pin structures are studied by admittance …

The effect of the Ge core size on the confinement energies, barrier heights, and hole
lifetimes in spherical Ge/Si core-shell nanocrystals is studied using an atomistic, tight …

Interband optical transitions in multilayer heterostructures with SiGe nanoislands were
investigated using photocurrent spectroscopy and photo-emf. The np heterostructures …

The lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots (QDs) is
investigated. Photoresponse in the range of 1.2–0.3 eV related to the optical transitions …

The results of the experimental studies of the effect of nanoislands on the lateral
photoconductivity in structures with Ge nanoislands formed on the SiOx layer using …

This paper demontstrates the possibility of develo** a high-voltage waveguide
photodetector comprised of Schottky diodes and based on a Au/Ge—Si structure with Ge …

The deposition of thin layers of amorphous (a-Si) or polycrystalline (poly-Si) silicon onto the
Ge 0.25 Si 0.7 5 film already covering the surface of a crystalline silicon (c-Si) wafer is found …

Due to the aggressive miniaturization of memory and logic devices, the current technologies
based on silicon have nearly reached their ultimate size limit. One method to maintain the …