Self-powered photodetector with low dark current based on the InSe/β-Ga 2 O 3 heterojunctions
YQ Wang, S Zhao, HY ** silicon in β-Ga2O3 thin films prepared using radio frequency magnetron sputtering
Y Zhang, M Zhang, W Hu, L Hou, S Jiang, Y Wang… - Vacuum, 2024 - Elsevier
Si-doped β-Ga 2 O 3 thin films were prepared on c-plane (001) sapphire substrates by radio
frequency magnetron sputtering, and then annealed at 800° C under Ar atmosphere for 1 h …
frequency magnetron sputtering, and then annealed at 800° C under Ar atmosphere for 1 h …
[HTML][HTML] Tailoring oxygen vacancies in Ga2O3 thin films and controlled formation of Ga2O3/SiO2 heterostructures via annealing
This study examines the effects of annealing duration on the oxygen vacancies in gallium
oxide (Ga 2 O 3) thin films. Ga 2 O 3 thin films were deposited by RF magnetron sputtering …
oxide (Ga 2 O 3) thin films. Ga 2 O 3 thin films were deposited by RF magnetron sputtering …
Ultraviolet to Red Wavelength-Dependent Gallium Oxide Memristor-Based Multi-Level Optoelectronic Synapse Device
HJ Lee, JH Kim, SH Lee, T Noh, SE Ahn… - Journal of Alloys and …, 2025 - Elsevier
Abstract We developed a Pt/Ga 2 O 3/Pt optoelectronic synaptic device with tunable memory
properties under different light wavelengths. The amorphous Ga 2 O 3 film confirmed …
properties under different light wavelengths. The amorphous Ga 2 O 3 film confirmed …