A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

Silicon photonics has been an area of active research and development. Researchers have
been working on enhancing the integration density and intricacy of silicon photonic circuits …

We introduced photon-trap** microstructures into GeSn-based photodetectors for the first
time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W …

Group IV alloys of GeSn have been extensively investigated as a competing material
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …

High-detectivity and low-cost short-wave infrared photodetectors with complementary metal–
oxide–semiconductor (CMOS) compatibility are attractive for various applications such as …

Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …

In this Letter, we demonstrate mid-infrared (MIR) lateral p− i− n GeSn waveguide
photodetectors (WGPDs) on silicon, to the best of our knowledge for the first time, as a key …

The Sn composition graded GeSn layer with Sn content increased from 11% to 14.3% was
grown on a Si substrate by molecular beam epitaxy. The structural properties of the GeSn …

The 2 µm wavelength band has recently gained increased attention for potential
applications in next-generation optical communication. However, it is still challenging to …

Ge 1-x Sn x alloy has emerged as a promising material for complementary metal-oxide
semiconductor (CMOS) compatible mid-infrared photodetectors (PDs). In addition to its …