The spin degree of freedom of an electron or a nucleus is one of the most basic properties of
nature and functions as an excellent qubit, as it provides a natural two-level system that is …

Abstract This Technical Review collects values of selected performance characteristics of
semiconductor spin qubits defined in electrically controlled nanostructures. The …

Quantum computation features known examples of hardware acceleration for certain
problems, but is challenging to realize because of its susceptibility to small errors from noise …

Abstract Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction
band valleys, which compete with the spin degree of freedom in the formation of qubits …

The electrical characterisation of classical and quantum devices is a critical step in the
development cycle of heterogeneous material stacks for semiconductor spin qubits. In the …

Silicon/silicon-germanium heterostructures have many important advantages for hosting
spin qubits. However, controlling the valley splitting (the energy splitting between the two …

Abstract In Si/SiGe heterostructures, the low-lying excited valley state seriously limits the
operability and scalability of electron spin qubits. For characterizing and understanding the …

We demonstrate rapid high-fidelity state preparation and measurement in exchange-only
Si/Si Ge triple-quantum-dot qubits. Fast measurement integration (980-ns) and initialization …

Electron spins confined in silicon quantum dots are promising candidates for large-scale
quantum computers. However, the degeneracy of the conduction band of bulk silicon …

Electron spins in silicon quantum dots are excellent qubits because they have long
coherence times and high gate fidelities and are compatible with advanced semiconductor …