Axial vs. radial junction nanowire solar cell
Both axial and radial junction nanowire solar cells have their challenges and advantages.
However, so far, there is no review that explicitly provides a detailed comparative analysis of …
However, so far, there is no review that explicitly provides a detailed comparative analysis of …
Modification of the atomic and electronic structure of III–V semiconductor surfaces at interfaces with electrolyte solutions
MV Lebedev - Semiconductors, 2020 - Springer
Recent experimental and theoretical data on modification of the atomic and electronic
structures of the surface of different III–V semiconductors by electrolyte solutions are …
structures of the surface of different III–V semiconductors by electrolyte solutions are …
Surface passivation of III–V GaAs nanopillars by low-frequency plasma deposition of silicon nitride for active nanophotonic devices
Numerous efforts have been devoted to improve the electronic and optical properties of III–V
compound materials via reduction of their nonradiative states, aiming at highly efficient III–V …
compound materials via reduction of their nonradiative states, aiming at highly efficient III–V …
Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed Microsphere Arrays
The enhancement of light extraction efficiency of InGaN quantum well light emitting diodes
(LEDs) was achieved by employing the refractive index matched TiO_2 microsphere arrays …
(LEDs) was achieved by employing the refractive index matched TiO_2 microsphere arrays …
Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties
We report fabrication methods, including metal masks and dry etching, and demonstrate
highly ordered vertical gallium arsenide nanowire arrays. The etching process created high …
highly ordered vertical gallium arsenide nanowire arrays. The etching process created high …
Single GaAs nanowire based photodetector fabricated by dielectrophoresis
Mechanical manipulation of nanowires (NWs) for their integration in electronics is still
problematic because of their reduced dimensions, risking to produce mechanical damage to …
problematic because of their reduced dimensions, risking to produce mechanical damage to …
Top-down fabrication of large-area GaN micro-and nanopillars
R Debnath, JY Ha, B Wen, D Paramanik… - Journal of Vacuum …, 2014 - pubs.aip.org
Large-area gallium nitride (GaN) micro-and nanopillar (NP) arrays were fabricated by
plasma etching of lithographically patterned GaN thin-film grown on Si substrate. Deep …
plasma etching of lithographically patterned GaN thin-film grown on Si substrate. Deep …
Controlled electrochemical growth of micro-scaled As2O3 and Ga2O3 oxide structures on p-type gallium arsenide
S Acikgoz, H Yungevis - Applied Physics A, 2022 - Springer
In this work, the double cell electrochemical etching technique is employed to study the
evolution of surface morphology during the etching of p-type gallium arsenide (GaAs) in a …
evolution of surface morphology during the etching of p-type gallium arsenide (GaAs) in a …
Geometrical shape design of nanophotonic surfaces for thin film solar cells
We present the effect of geometrical parameters, particularly shape, on optical absorption
enhancement for thin film solar cells based on crystalline silicon (c-Si) and gallium arsenide …
enhancement for thin film solar cells based on crystalline silicon (c-Si) and gallium arsenide …
Improved Performance of AlGaInP Red Micro Light-Emitting Diodes by Sidewall Treatments of Citric Acid
ZJ Wang, XL Ye, CC Yang, WC Tu… - IEEE Photonics …, 2024 - ieeexplore.ieee.org
The efficiency of AlGaInP micro light-emitting diodes (micro-LEDs) was far weaker than that
of GaN-based micro-LEDs in structure and performance. Consequently, there was an urgent …
of GaN-based micro-LEDs in structure and performance. Consequently, there was an urgent …