Negative capacitance in short-channel FinFETs externally connected to an epitaxial ferroelectric capacitor

AI Khan, K Chatterjee, JP Duarte, Z Lu… - IEEE Electron …, 2015 - ieeexplore.ieee.org
We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of
magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) …

Opportunities in device scaling for 3-nm node and beyond: FinFET versus GAA-FET versus UFET

UK Das, TK Bhattacharyya - IEEE transactions on electron …, 2020 - ieeexplore.ieee.org
The performances of FinFET, gate-all-around (GAA) nanowire/nanosheet, and U-shaped
FETs (UFETs) are studied targeting the 3-nm node (N3) and beyond CMOS dimensions. To …

A Perspective View of Silicon Based Classical to Non-Classical MOS Transistors and their Extension in Machine Learning

AP Singh, VK Mishra, S Akhter - Silicon, 2023 - Springer
Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …

Impact of variability on processor performance in negative capacitance finfet technology

H Amrouch, G Pahwa, AD Gaidhane… - … on Circuits and …, 2020 - ieeexplore.ieee.org
In this work, we investigate for the first time the impact of Negative Capacitance FinFET (NC-
FinFET) technology on the performance of processors under the effects of process variations …

Negative capacitance transistor to address the fundamental limitations in technology scaling: Processor performance

H Amrouch, G Pahwa, AD Gaidhane, J Henkel… - IEEE …, 2018 - ieeexplore.ieee.org
Negative capacitance field-effect transistor (NCFET) addresses one of the key fundamental
limits in technology scaling, akin to the non-scalable Boltzmann factor, by offering a sub …

Insights into the operation of negative capacitance FinFET for low power logic applications

RK Jaisawal, PN Kondekar, S Yadav, P Upadhyay… - Microelectronics …, 2022 - Elsevier
In the incessant search to overcome the power densities and energy efficient limitations,
performance matrix of emerging electronic devices are being explored inevitably to find the …

Technology and modeling of nonclassical transistor devices

GV Angelov, DN Nikolov… - Journal of Electrical and …, 2019 - Wiley Online Library
This paper presents a comprehensive outlook for the current technology status and the
prospective upcoming advancements. VLSI scaling trends and technology advancements in …

Performance evaluation of 7-nm node negative capacitance FinFET-based SRAM

T Dutta, G Pahwa, AR Trivedi, S Sinha… - IEEE Electron …, 2017 - ieeexplore.ieee.org
We compare the performance of static random access memory (SRAM) cells based on
negative capacitance (NC) FinFETs and reference FinFETs at the 7-nm technology node …

Fast Near‐Infrared Photodetectors Based on Nontoxic and Solution‐Processable AgBiS2

YT Huang, D Nodari, F Furlan, Y Zhang, M Rusu, L Dai… - Small, 2024 - Wiley Online Library
Solution‐processable near‐infrared (NIR) photodetectors are urgently needed for a wide
range of next‐generation electronics, including sensors, optical communications and …

All-in-memory brain-inspired computing using fefet synapses

S Thomann, HLG Nguyen, PR Genssler… - Frontiers in …, 2022 - frontiersin.org
The separation of computing units and memory in the computer architecture mandates
energy-intensive data transfers creating the von Neumann bottleneck. This bottleneck is …