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Construction of Ag nanoparticle decorated AgBr/BiVO4 shell/core structure plasmonic photocatalysts towards high photocatalytic elimination of contaminations under …
M Liu, L Zheng, J Deng, J Gao, K Su, X Sheng… - Journal of Alloys and …, 2023 - Elsevier
Constructing highly efficient, stable and wide applicable photocatalysts with simple and
controllable components to confront the environmental issue need sustained efforts. In this …
controllable components to confront the environmental issue need sustained efforts. In this …
Study of molecular layer deposition of zinc-based hybrid film as photoresist
Y Shan, X Wang, X Zheng, X Zhao, Z Feng… - Applied Surface …, 2025 - Elsevier
Molecular layer deposition (MLD) of metal oxide and organic hybrid thin films has great
potential to be utilized in extreme ultraviolet photoresist, thanks to its excellent uniformity on …
potential to be utilized in extreme ultraviolet photoresist, thanks to its excellent uniformity on …
Properties and modification of native oxides of InP (100)
M Ebrahimzadeh, S Vuori, M Miettinen… - Journal of Physics D …, 2022 - iopscience.iop.org
Abstract Properties of oxidized InP surfaces, which are known to cause less electrical and
optical losses than other III–V oxides, are relevant to develop the passivation of current and …
optical losses than other III–V oxides, are relevant to develop the passivation of current and …
Wet Chemical Treatment and Mg Do** of p‐InP Surfaces for Ohmic Low‐Resistive Metal Contacts
M Ebrahimzadeh, S Granroth, S Vuori… - Advanced …, 2023 - Wiley Online Library
Manufacturing a low‐resistive Ohmic metal contact on p‐type InP crystals for various
applications is a challenge because of the Fermi‐level pinning via surface defects and the …
applications is a challenge because of the Fermi‐level pinning via surface defects and the …
[PDF][PDF] Characterization and Growth Mechanisms of Low Dimensional InP Materials
Y NIU, S MA, H DONG, Z YANG, X HAO, B HAN… - 发光学报, 2024 - cjl.lightpublishing.cn
Indium phosphide (InP) is an important Ⅲ⁃ Ⅴ semiconductor material that has recently re⁃
ceived considerable attention because of its unique optical and electrical properties …
ceived considerable attention because of its unique optical and electrical properties …
[HTML][HTML] 低维 InP 材料的表征和生长机理研究
牛艳萍, 马淑芳, 董浩琰, 阳智, 郝晓东… - Chinese Journal of …, 2024 - opticsjournal.net
摘要磷化铟作为一种重要的Ⅲ? Ⅴ 半导体材料, 由于其独特的光学和电学特性, **年来备受关注.
大量的研究表明, 它在光电子, 催化, 医学等领域具有潜在的应用前景. 但目前在低维InP …
大量的研究表明, 它在光电子, 催化, 医学等领域具有潜在的应用前景. 但目前在低维InP …