Oxide-based RRAM materials for neuromorphic computing
XL Hong, DJJ Loy, PA Dananjaya, F Tan… - Journal of materials …, 2018 - Springer
In this review, a comprehensive survey of different oxide-based resistive random-access
memories (RRAMs) for neuromorphic computing is provided. We begin with the history of …
memories (RRAMs) for neuromorphic computing is provided. We begin with the history of …
ZnO and ZnO-based materials as active layer in resistive random-access memory (RRAM)
E Nowak, E Chłopocka, M Szybowicz - Crystals, 2023 - mdpi.com
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has
been conducted. Firstly, the motivation for creating new memory technology is presented …
been conducted. Firstly, the motivation for creating new memory technology is presented …
A magnetic field controlled memristor towards the design of an implantable detector
S Mao, B Sun, G Zhou, J Qin, Y Yang, Z Rao… - Journal of Colloid and …, 2023 - Elsevier
Memristors, which combine the behaviors of memory and resistive switching (RS), have a
wide application prospect in information processing and artificial neural networks. The RS …
wide application prospect in information processing and artificial neural networks. The RS …
Semimetal bismuth mediated UV–vis-IR driven photo-thermocatalysis of Bi4O5I2 for carbon dioxide to chemical energy
Y Bai, P Yang, P Wang, H ** on the performance of La-based RRAM devices
Y Wang, H Liu, X Wang, L Zhao - Nanoscale Research Letters, 2019 - Springer
In this paper, the effects of Cu insertion layer and rapid thermal annealing on the resistive
switching behaviors of La-based resistive switching access memory (RRAM) devices have …
switching behaviors of La-based resistive switching access memory (RRAM) devices have …
Synthesis of novel Bi/Bi4O5Br2 via a UV light irradiation for decomposing the oil field pollutants
X Zhang, P Yang, B Yang, Y Bai, W Liu… - Inorganic Chemistry …, 2020 - Elsevier
Semimetal bismuth attracted extensive interests of researchers, owing to its merit of the
surface particle resonance (SPR) and co-catalyst properties. In this paper, under the UV–vis …
surface particle resonance (SPR) and co-catalyst properties. In this paper, under the UV–vis …
Exploration of highly enhanced performance and resistive switching mechanism in hafnium do** ZnO memristive device
L Zhang, H Huang, C Ye, KC Chang… - Semiconductor …, 2018 - iopscience.iop.org
Abstract 1× 1 μm 2 via hole structure ZnO-based resistive random access memory cells are
fabricated and the resistive switching behavior is investigated. It can be found that with 5.7 …
fabricated and the resistive switching behavior is investigated. It can be found that with 5.7 …
Investigation of the surface, morphological and optical properties of boron–doped ZnO thin films deposited by thermionic vacuum arc technique
In this study, boron—doped ZnO (ZnO: B) thin films have been deposited on amorphous
glass and polyethylene terephthalate (PET) substrates by thermionic vacuum arc (TVA) …
glass and polyethylene terephthalate (PET) substrates by thermionic vacuum arc (TVA) …
Buried Au nanoparticles-assisted enhancement of local electric field toward improved resistance switching in Au/ZnO/Si structures
Z Lv, M Chen, Q Zhang, H Zhang, C Zhang… - Applied Physics …, 2025 - pubs.aip.org
In this work, we reported the fabrication of improved Au/ZnO/Si resistance switching (RS)
devices achieved by introducing buried cone-like Au nanoparticles (NPs). The Au NPs were …
devices achieved by introducing buried cone-like Au nanoparticles (NPs). The Au NPs were …