Resistive switching materials for information processing
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
Ferroelectric domain walls for nanotechnology
Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …
High-density switchable skyrmion-like polar nanodomains integrated on silicon
Abstract Topological domains in ferroelectrics,,,–have received much attention recently
owing to their novel functionalities and potential applications, in electronic devices. So far …
owing to their novel functionalities and potential applications, in electronic devices. So far …
Advances in magnetoelectric multiferroics
The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic
materials has driven significant research activity, with the goal of realizing their …
materials has driven significant research activity, with the goal of realizing their …
Scanning probe microscopy
Scanning probe microscopy (SPM), a key invention in nanoscience, has by now been
extended to a wide spectrum of basic and applied fields. Its application to basic science led …
extended to a wide spectrum of basic and applied fields. Its application to basic science led …
Topological magnetic and ferroelectric systems for reservoir computing
Topological spin textures in magnetic materials and arrangements of electric dipoles in
ferroelectrics are considered to be promising candidates for next-generation information …
ferroelectrics are considered to be promising candidates for next-generation information …
Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials
Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …
approaching the unit cell level. When this spatial confinement is combined with observations …
Recent progress in two‐dimensional ferroelectric materials
Z Guan, H Hu, X Shen, P **ang… - Advanced Electronic …, 2020 - Wiley Online Library
The investigation of two‐dimensional (2D) ferroelectrics has attracted significant interest in
recent years for applications in functional electronics. Without the limitation of a finite size …
recent years for applications in functional electronics. Without the limitation of a finite size …
Nonvolatile ferroelectric domain wall memory integrated on silicon
Ferroelectric domain wall memories have been proposed as a promising candidate for
nonvolatile memories, given their intriguing advantages including low energy consumption …
nonvolatile memories, given their intriguing advantages including low energy consumption …
The evolution of multiferroics
Materials with a coexistence of magnetic and ferroelectric order—multiferroics—provide an
efficient route for the control of magnetism by electric fields. The study of multiferroics dates …
efficient route for the control of magnetism by electric fields. The study of multiferroics dates …