Xbar-partitioning: a practical way for parasitics and noise tolerance in analog imc circuits

MH Amin, ME Elbtity, R Zand - IEEE Journal on Emerging and …, 2022 - ieeexplore.ieee.org
Conventional in-memory computing (IMC) architectures consist of analog memristive
crossbars to accelerate matrix-vector multiplication (MVM), and digital functional units to …

5.6 Mb/mm 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm …

JP Kulkarni, J Keane, KH Koo, S Nalam… - IEEE Journal of Solid …, 2016 - ieeexplore.ieee.org
Multiported high-performance on-die memories occupy significantly more die area than a
comparable single-port memory. Among various multiport memory topologies, the 1-read …

A 4.24-GHz 128× 256 SRAM operating double pump read write same cycle in 5-nm technology

N Zhang, YS Kim, P Hsu, S Kim, D Tao… - IEEE Solid-State …, 2023 - ieeexplore.ieee.org
A High-Speed High-Density 1R1W two port 32Kbit () SRAM with single port 6T bitcell macro
is proposed. A read-then-write (RTW) double pump CLK generation circuit with tracking …

A 128 kb 7T SRAM using a single-cycle boosting mechanism in 28-nm FD–SOI

B Mohammadi, O Andersson, J Nguyen… - … on Circuits and …, 2017 - ieeexplore.ieee.org
A 128-kb ultra-low voltage SRAM, based on a leakage optimized single-WELL 7T bitcell in
28-nm FD-SOI technology is presented. An ideal power management scenario in a single …

Energy-efficient high bandwidth 6T SRAM design on Intel 4 CMOS technology

Y Kim, C Ong, AM Pillai, H Jagadeesh… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
In this article, we present an energy-efficient high bandwidth array design using 0.0300-high-
performance SRAM bitcell on Intel 4 CMOS technology. By employing a unique combination …

Disturbance aware dynamic power reduction in synchronous 2RW dual-port 8T SRAM by self-adjusting wordline pulse timing

Y Yokoyama, K Nii, Y Ishii, S Tanaka… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
An effective design is proposed to reduce dynamic power consumption for a common clock
synchronous two-read/write (2RW) dual-port (DP) 8T static random access memory (SRAM) …

[HTML][HTML] Multi-Vdd Design for Content Addressable Memories (CAM): A Power-Delay Optimization Analysis

S Joshi, D Li, S Ogrenci-Memik, G Deptuch… - Journal of Low Power …, 2018 - mdpi.com
In this paper, we characterize the interplay between power consumption and performance of
a matchline-based Content Addressable Memory and then propose the use of a multi-Vdd …

A 290-mV, 7-nm ultra-low-voltage one-port SRAM compiler design using a 12T write contention and read upset free bit-cell

ME Sinangil, YT Lin, HJ Liao… - IEEE Journal of Solid …, 2019 - ieeexplore.ieee.org
In this paper, we present an ultra-low voltage oneport static random access memory (SRAM)
compiler targeting small to medium array sizes to provide a smaller area solution compared …

17.2 5.6 Mb/mm2 1R1W 8T SRAM arrays operating down to 560mV utilizing small-signal sensing with charge-shared bitline and asymmetric sense amplifier in 14nm …

J Keane, J Kulkarni, KH Koo, S Nalam… - … Solid-State Circuits …, 2016 - ieeexplore.ieee.org
System-on-Chip (SoC) designs contain a variety of IP blocks which use multiport memories
to improve performance by enabling multiple simultaneous operations in the same memory …

A low voltage SRAM using resonant supply boosting

RV Joshi, MM Ziegler, H Wetter - IEEE Journal of Solid-State …, 2016 - ieeexplore.ieee.org
This paper presents a novel resonating inductor-based supply boosting scheme for low-
voltage static random-access memories and logic in deep 14-nm silicon on insulator (SOI) …