Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …

Materials in which quantum mechanical effects lead to novel properties on the macroscopic
scale are of interest both fundamentally and for applications. For such quantum materials …

A prominent challenge towards novel nanoelectronic technologies is to understand and
control materials functionalities down to the smallest scale. Topological defects in ordered …

Powered by big data and artificial intelligence, data-centric innovations are bringing about
transformative societal changes and are expected to continue to meteorically rise for the …

Understanding the nanoscale electrodynamic properties of a material at microwave
frequencies is of great interest for materials science, condensed matter physics, device …

Ferroelectric domain walls exhibit a range of interesting electrical properties and are now
widely recognized as functional 2D systems for the development of next‐generation …

Randomly distributed topological defects created during the spontaneous symmetry
breaking are the fingerprints to trace the evolution of symmetry, range of interaction, and …

Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories,
transistors, and rectifiers, have been demonstrated in recent years. Practical high‐speed …

Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to
investigate the electric conduction at nominally neutral domain walls in hexagonal …