Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction
Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus
(BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward …
(BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward …
Programmable devices based on reversible solid-state do** of two-dimensional semiconductors with superionic silver iodide
Abstract Two-dimensional (2D) semiconductors are attractive for electronic devices with
atomically thin channels. However, controlling the electronic properties of the 2D materials …
atomically thin channels. However, controlling the electronic properties of the 2D materials …
Complementary black phosphorus tunneling field-effect transistors
Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising
candidates for low-power integration circuits beyond conventional metal-oxide …
candidates for low-power integration circuits beyond conventional metal-oxide …
An expanded benchmarking of beyond-CMOS devices based on Boolean and neuromorphic representative circuits
The latest results of benchmarking research are presented for a variety of beyond-CMOS
charge-and spin-based devices. In addition to improving the device-level models, several …
charge-and spin-based devices. In addition to improving the device-level models, several …
Electric double-layer gating of two-dimensional field-effect transistors using a single-ion conductor
Electric double-layer (EDL) gating using a custom-synthesized polyester single-ion
conductor (PE400-Li) is demonstrated on two-dimensional (2D) crystals for the first time. The …
conductor (PE400-Li) is demonstrated on two-dimensional (2D) crystals for the first time. The …
Design rules for high performance tunnel transistors from 2-D materials
H Ilatikhameneh, G Klimeck… - IEEE Journal of the …, 2016 - ieeexplore.ieee.org
Tunneling field-effect transistors (TFETs) based on 2-D materials are promising steep sub-
threshold swing devices due to their tight gate control. There are two major methods to …
threshold swing devices due to their tight gate control. There are two major methods to …
Steep slope transistors: Tunnel FETs and beyond
Steep slope transistors: Tunnel FETs and beyond Page 1 Steep Slope Transistors: Tunnel FETs
and Beyond Alan Seabaugh, Cristóbal Alessandri, Mina Asghari Heidarlou, Hua-Min Li, Leitao …
and Beyond Alan Seabaugh, Cristóbal Alessandri, Mina Asghari Heidarlou, Hua-Min Li, Leitao …
A p-channel GaN heterostructure tunnel FET with high ON/OFF current ratio
A novel mechanism to achieve a nonambipolar tunnel FET (TFET) is proposed in this paper.
The method relies on polarization charge induced in semiconductors, such as group III …
The method relies on polarization charge induced in semiconductors, such as group III …
Tunnel-FET switching is governed by non-Lorentzian spectral line shape
In tunnel field-effect transistors (tFETs), the preferred mechanism for switching occurs by
alignment (on) or misalignment (off) of two energy levels or band edges. Unfortunately …
alignment (on) or misalignment (off) of two energy levels or band edges. Unfortunately …
Performance investigation of steep-slope core–shell nanotube indium nitride electron–hole bilayer tunnel field effect transistor
Z Ahangari - Applied Physics A, 2019 - Springer
In this paper, the effects of main physical and structural parameters on the electrical
characteristics of indium nitride core–shell nanotube electron–hole bilayer tunnel field effect …
characteristics of indium nitride core–shell nanotube electron–hole bilayer tunnel field effect …