In this work the relationship between the characteristic energy of the Urbach edge E 0 and
the parameter B 1 2 of the Tauc's representation of the absorption coefficient of a-SiN-and a …

The known properties of nitrogen as an impurity in, and as an alloy element of, the
germanium network are reviewed in this article. Amorphous and crystalline germanium …

Large negative magnetoresistance (NMR), an important property for spintronics, requires
experimental realization owing to the lack of suitable structural motifs. Herein, a remarkable …

We report on the electrical transport properties of polycrystalline germanium thin films which
are grown by the DC magnetron sputtering method. The temperature dependent resistance …

A systematic study of the chemical bonding in hydrogenated amorphous germanium–carbon
(a-Ge 1-x C x: H) alloys using X-ray photoelectron spectroscopy (XPS) is presented. The …

We discuss the likely origin of the exponential absorption tail, or Urbach edge, of fourfold
coordinated amorphous (a-) semiconductors. The present analysis is based on a …

In this work experimental data referring to the structural and optoelectronic characteristics of
amorphous-germanium-nitrogen thin films are presented and discussed. The nitrogen …

Herein, we report the transport properties of Ge films. The variable-range hop** transport
at low temperatures (T≲ 50 K) and thermal activation transport at high temperatures (T≳ 50 …

The bonding properties of hydrogenated amorphous germanium–carbon (a-Ge1− xCx: H)
alloy films, deposited by the rf-co-sputtering technique, were measured by Fourier transform …

Optoelectronic, structural, and mechanical properties of hydrogenated amorphous
germanium carbon (a-Ge 1− x C x: H) alloys are presented. The films were prepared by the …