The 13.5-nm extreme ultraviolet (EUV) light radiated by laser-produced tin droplet plasma is
successfully used in manufacturing integrated circuits with critical dimensions (CDs) below 7 …

We demonstrated an efficient extreme ultraviolet (EUV) source at a wavelength of 13.5 nm
using spatially separated multiple solid-state-laser pulse irradiation. The maximum …

Semiconductors are the foundation of modern technology, used in our personal, industrial,
and military-grade devices. Every aspect of US society is closely tied to semiconductors, and …

A universal power-law scaling z¯∝ E 0.4 in the correlation between the average ion charge
state z¯ and kinetic energy E in expanding laser-driven tin plasmas is identified. Universality …

We report on a highly efficient, in-band pumped, Q-switched, Tm-doped, rod-type master
oscillator power amplifier (MOPA) system delivering up to 140? W average output power …

Modeling the hundreds-of-nanoseconds-long irradiation of tin droplets with a 2 µm-wavelength
laser for future EUV lithography - IOPscience Skip to content IOP Science home Accessibility …

Microstructure-enhanced discharges are critical for achieving higher plasma electron
density and energy, offering significant potential in advanced plasma applications. A two …

The radiative opacity of Sn plasmas plays a crucial role in the investigation of extreme
ultraviolet (EUV) lithography. In this study, a complete atomic database of Sn 4+–Sn 18+ is …

We have demonstrated a continuous-operated water-window (WW) x-ray source using a
regenerative liquid bismuth (Bi) jet for 120? min. A regenerative liquid Bi jet with a diameter …

Spatial and temporal characteristics of a table-top scale laser produced plasma formed on
the surface of a tungsten target are reported. The emitted radiation was spectrally filtered to …