Semiconductor nanowires: to grow or not to grow?

PC McIntyre, AF i Morral - Materials Today Nano, 2020 - Elsevier
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

Rational design of nanowire solar cells: from single nanowire to nanowire arrays

W Chen, PR i Cabarrocas - Nanotechnology, 2019 - iopscience.iop.org
In this review, we report several rational designs of nanowire-based solar cells from single
nanowire to nanowire arrays. Two methods of nanowires fabrication: via'top …

Large thermoelectric figure-of-merits from SiGe nanowires by simultaneously measuring electrical and thermal transport properties

EK Lee, L Yin, Y Lee, JW Lee, SJ Lee, J Lee… - Nano …, 2012 - ACS Publications
The strongly correlated thermoelectric properties have been a major hurdle for high-
performance thermoelectric energy conversion. One possible approach to avoid such …

High efficiency hybrid solar cells using nanocrystalline Si quantum dots and Si nanowires

M Dutta, L Thirugnanam, PV Trinh, N Fukata - ACS nano, 2015 - ACS Publications
We report on an efficient hybrid Si nanocrystal quantum dot modified radial p–n junction
thinner Si solar cell that utilizes the advantages of effective exciton collection by energy …

Tuning the surface charge properties of epitaxial InN nanowires

S Zhao, S Fathololoumi, KH Bevan, DP Liu… - Nano …, 2012 - ACS Publications
We have investigated the correlated surface electronic and optical properties of [0001]-
oriented epitaxial InN nanowires grown directly on silicon. By dramatically improving the …

Atom probe tomography analysis of boron and/or phosphorus distribution in doped silicon nanocrystals

K Nomoto, H Sugimoto, A Breen… - The Journal of …, 2016 - ACS Publications
Silicon nanocrystals (Si NCs) are intensively studied for optoelectronic and biological
applications due to having highly attractive features such as band engineering. Although …

Visible and infra-red light emission in boron-doped wurtzite silicon nanowires

F Fabbri, E Rotunno, L Lazzarini, N Fukata… - Scientific reports, 2014 - nature.com
Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for
optoelectronic applications owing to its indirect electronic band gap, which limits its …

Self-assembly of carbon Black/AAO templates on nanoporous Si for broadband infrared absorption

H Li, L Wu, H Zhang, W Dai, J Hao, H Wu… - … applied materials & …, 2019 - ACS Publications
Broadband absorption in the mid-infrared region is of significance for wide applications,
such as photo/thermal detection, infrared stealth, and thermal imaging. Recently, metal …

Characterization of impurity do** and stress in Si/Ge and Ge/Si core–shell nanowires

N Fukata, M Mitome, T Sekiguchi, Y Bando… - ACS …, 2012 - ACS Publications
Core–shell nanowires (NWs) composed of silicon (Si) and germanium (Ge) are key
structures for realizing high mobility transistor channels, since the site-selective do** and …

[HTML][HTML] Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires

PP Michałowski, J Müller, C Rossi, A Burenkov, E Bär… - Measurement, 2023 - Elsevier
The development of non-planar structures such as arrays of nanowires (NWs), poses a
significant challenge for dopant concentration determination. Techniques that can be readily …