Anharmonic Keating model for group-IV semiconductors with application to the lattice dynamics in alloys of Si, Ge, and C
H Rücker, M Methfessel - Physical Review B, 1995 - APS
A generalization of the Keating model is given which treats anharmonic effects in a much
improved manner. The dependence of the bond-stretching and bond-bending force …
improved manner. The dependence of the bond-stretching and bond-bending force …
Carbon-mediated effects in silicon and in silicon-related materials
W Skorupa, RA Yankov - Materials chemistry and physics, 1996 - Elsevier
The present review deals with effects caused by the presence of carbon in single-crystal
silicon, as well as in some silicon-related materials. Three main areas are covered, with …
silicon, as well as in some silicon-related materials. Three main areas are covered, with …
Growth and properties of strained Si1-x-yGexCy layers
SC Jain, HJ Osten, B Dietrich… - … science and technology, 1995 - iopscience.iop.org
Advances made in the growth and properties of CSi and CSiGe pseudomorphic strained
layers are reviewed. The solubility of C in Si is small (3.5* 10 17 atoms/cm 3 near the melting …
layers are reviewed. The solubility of C in Si is small (3.5* 10 17 atoms/cm 3 near the melting …
Optical and electronic properties of SiGeC alloys grown on Si substrates
Metastable Si1− x− yGexCy alloys were grown by molecular beam epitaxy on (100) Si
substrates. Solid elemental sources were used for the Si and Ge beams, and a resistively …
substrates. Solid elemental sources were used for the Si and Ge beams, and a resistively …
Phonons as a probe of short-range order in alloys
H Rücker, M Methfessel, B Dietrich, K Pressel… - Physical Review B, 1996 - APS
This paper shows that by combining theoretical and experimental results for local Si-C
phonon modes in dilute Si 1− x C x alloys, information concerning the short-range order can …
phonon modes in dilute Si 1− x C x alloys, information concerning the short-range order can …
Strain relaxation in tensile-strained layers on Si (001)
HJ Osten, D Endisch, E Bugiel, B Dietrich… - Semiconductor …, 1996 - iopscience.iop.org
We investigated in detail the strain relaxation behaviour of metastable tensile-strained
epilayers on Si (001) by comparing the layers before and after an annealing step using a …
epilayers on Si (001) by comparing the layers before and after an annealing step using a …
The application of approximate density functionals to complex systems
The application of density functional theory to complex systems requires simplifications. We
describe our methodology, which uses the Harris functional, and its self‐consistent …
describe our methodology, which uses the Harris functional, and its self‐consistent …
Raman spectroscopy study of microscopic strain in epitaxial Si1− x− yGexCy alloys
Raman spectroscopy is used to characterize the microscopic bond structure of Si1x yGexCy
alloys epitaxially grown on Si substrates by C implantation into Si1xGex epilayers and …
alloys epitaxially grown on Si substrates by C implantation into Si1xGex epilayers and …
Defect Characterization of HfTiOx Gate Dielectrics on SiGe Heterolayers Using Inelastic Tunneling Spectroscopy
Ultra-thin HfTiOx dielectric films (Ti~ 26.6%) of thickness~ 12 nm have been deposited
through an RF magnetron co-sputtering process on strained Si0. 81Ge0. 19 substrates …
through an RF magnetron co-sputtering process on strained Si0. 81Ge0. 19 substrates …
Optical transitions in strained Si1−yCy layers on Si(001)
W Kissinger, M Weidner, HJ Osten, M Eichler - Applied physics letters, 1994 - pubs.aip.org
The effect of the carbon content on the optical transitions of Si1− y C y layers grown
pseudomorphically on Si (001) substrates was investigated by spectroscopic ellipsometry …
pseudomorphically on Si (001) substrates was investigated by spectroscopic ellipsometry …