Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Inserting interfacial layer for atomic-scaled hydrogen control to enhance electrical properties of InZnO TFTs
SI Cho, N Woo, HJ Jeong… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
As the application of oxide semiconductor thin-film transistors (oxide TFTs) expands, higher
electrical properties are required. Hydrogen (H) is a crucial element related to both the …
electrical properties are required. Hydrogen (H) is a crucial element related to both the …
Exploring new logic devices: Unlocking potential with floating-gate transistor
Floating-gate devices occupy a pivotal position in contemporary electronic systems, owing to
their versatile capabilities in nonvolatile memory storage, analog circuit design, and …
their versatile capabilities in nonvolatile memory storage, analog circuit design, and …
Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoOx Ion …
Write-once-read-many-times (WORM) memory characteristics with a large memory window
are demonstrated in a thin-film transistor (TFT) composed of an indium-gallium-zinc oxide …
are demonstrated in a thin-film transistor (TFT) composed of an indium-gallium-zinc oxide …
Critical Issues in Advanced ReRAM Development
M Peckerar, PC Huang, RA Jamil, B Jacob… - Proceedings of the …, 2023 - dl.acm.org
For many years, Resistive RAM (ReRAM) technology has been pursued as a potentially
high yield 3D memory. Recent improvements include the addition of diode-select devices …
high yield 3D memory. Recent improvements include the addition of diode-select devices …
Властивості матеріалів для резистивної пам'яті з довільним доступом
ДВ Залевський - 2023 - elibrary.kdpu.edu.ua
Дисертацію присвячено вивченню матеріалів для робочого шару комірок резистивної
пам'яті з довільним доступом. Дослідження виконано методами функціоналу …
пам'яті з довільним доступом. Дослідження виконано методами функціоналу …