Power module packaging technologies have been experiencing extensive changes as the
novel silicon carbide (SiC) power devices with superior performance become commercially …

Silicon-Carbide (SiC) devices with superior performance over traditional silicon power
devices have become the prime candidates for future high-performance power electronics …

Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due
to their superior characteristics compared to their Si counterparts. However, their fast …

Power devices based on wide-bandgap material such as silicon carbide (SiC) can operate
at higher switching speeds, higher voltages, and higher temperatures compared to those …

Semiconductor power modules are core components of power electronics in electrified
vehicles. Packaging technology often has a critical impact on module performance and …

Power modules are core components of inverters in electric vehicles and their packaging
technology has a critical impact on system performance and reliability. Conventional single …

This article discusses electrical design optimization of a 3.3 kW, 380 V to 250–380 V, 500
kHz, dual-active-bridge dc–dc converter for onboard chargers, operated with constant-power …

SiC devices are promising for outperforming Si counterparts in high-frequency applications
due to its superior material properties. Conventional wirebonded packaging scheme has …

Due to their superior material properties, wide bandgap (WBG) semiconductors enable the
application of power electronics at higher temperature operation, higher frequencies, and …

Figures-of-Merit (FOMs) are widely-used to compare power semiconductor materials and
devices and to motivate research and development of new technology nodes. These …