Being direct wide bandgap, III‐nitride (III‐N) semiconductors have many applications in
optoelectronics, including light‐emitting diodes, lasers, detectors, photocatalysis, etc …

Micro‐and nanolasers are emerging optoelectronic components with many properties still to
be explored and understood. On the one hand, they make it possible to address …

The pursuit of compact lasers with low thresholds has imposed strict requirements on tight
light confinements with minimized radiation losses. Bound states in the continuum (BICs) …

Lasers have both ubiquitous applications and roles as model systems in which non-
equilibrium and cooperative phenomena can be elucidated. The introduction of novel …

Highly integrated optoelectronic and photonic systems underpin the development of next-
generation advanced optical and quantum communication technologies, which require …

Crystallographic point defects (PDs) can dramatically decrease the efficiency of
optoelectronic semiconductor devices, many of which are based on quantum well (QW) …

Engineering an array of precisely located cavity-coupled active media poses a major
experimental challenge in the field of hybrid integrated photonics. We deterministically …

Self‐assembled semiconductor quantum dots face challenges in terms of scalable device
integration because of their random growth positions, originating from the Stranski …

Nanolasers based on emerging dielectric cavities with deep sub‐wavelength confinement of
light offer a large light‐matter coupling rate and near‐unity spontaneous emission factor, β β …

Nanolasers operate with a minimal amount of active material and low losses. In this regime,
single layers of transition-metal dichalcogenides (TMDs) are being investigated as next …