Le développement de la technologie et de l'infrastructure relatives à la lithographie en
ultraviolet extrême (EUVL) a fait d'excellents progrès ces dernières années et les …

The industry is transitioning EUV lithography from feasibility phase to technology
development. EUV mask infrastructure needs to be prepared to support the technology …

One of the key challenges for the successful implementation of EUV Lithography (EUVL) is
the supply of defect free mask blanks. Obviously a reliable defect inspection is a prerequisite …

In extreme ultraviolet lithography (EUVL), the multilayer (ML) damage-free mask patterning
processes and damage-free usage cycle are the keys in obtaining a successful, functional …

A defect repair device includes a defect inspection unit configured to find a size of a
protruding defect on a front surface of a multi-layer film having a rear surface opposite to the …

Sensitivity-limiting factors of at-wavelength inspection for extreme UV lithography (EUVL)
mask blanks have been analyzed. The sensitivity of the inspection tool is modeled on the …

The development of defect-free mask blanks including inspection is one of the big
challenges for the implementation of extreme ultraviolet lithography (EUVL), especially …

In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and
beyond is reviewed. A broad range of topics, including history, technologies, critical …

Actinic (at-wavelength) inspection of EUV mask blanks using a dark-field imaging proved a
high sensitivity for detecting multilayer defects through detecting programmed phase defects …

US7504185B2 - Method for depositing multi-layer film of mask blank for EUV lithography and
method for producing mask blank for EUV lithography - Google Patents US7504185B2 …