Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …

Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

In the field of high-power electronics, gallium oxide (Ga2O3) is attracting attention due to its
wide bandgap and ability to be doped n-type. Point defects, including vacancies, impurities …

Tin selenide (SnSe) is one of the most promising candidates to realize environmentally
friendly, cost‐effective, and high‐performance thermoelectrics, derived from its outstanding …

Ga 2 O 3 is emerging as an important electronic material. Alloying with Al 2 O 3 is a viable
method to achieve carrier confinement, to increase the bandgap, or to modify the lattice …

Deep level optical spectroscopy (DLOS) and deep level transient spectroscopy (DLTS)
measurements performed on Ni/β-Ga 2 O 3 Schottky diodes fabricated on unintentionally …