Review of magnetic tunnel junctions for stochastic computing
Modern computing schemes require large circuit areas and large energy consumption for
neuromorphic computing applications, such as recognition, classification, and prediction …
neuromorphic computing applications, such as recognition, classification, and prediction …
Intrinsic optimization using stochastic nanomagnets
This paper draws attention to a hardware system which can be engineered so that its
intrinsic physics is described by the generalized Ising model and can encode the solution to …
intrinsic physics is described by the generalized Ising model and can encode the solution to …
Nanosecond true-random-number generation with superparamagnetic tunnel junctions: Identification of Joule heating and spin-transfer-torque effects
This work investigates nanosecond superparamagnetic switching in 50-nm-diameter in-
plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial …
plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial …
Low-barrier nanomagnets as p-bits for spin logic
It has recently been shown that a suitably interconnected network of tunable telegraphic
noise generators or “p-bits” can be used to perform even precise arithmetic functions like a …
noise generators or “p-bits” can be used to perform even precise arithmetic functions like a …
Energy-efficient stochastic computing with superparamagnetic tunnel junctions
Superparamagnetic tunnel junctions (SMTJs) have emerged as a competitive, realistic
nanotechnology to support novel forms of stochastic computation in CMOS-compatible …
nanotechnology to support novel forms of stochastic computation in CMOS-compatible …
[HTML][HTML] Superparamagnetic perpendicular magnetic tunnel junctions for true random number generators
Superparamagnetic perpendicular magnetic tunnel junctions are fabricated and analyzed
for use in random number generators. Time-resolved resistance measurements are used as …
for use in random number generators. Time-resolved resistance measurements are used as …
Magnetic stray fields in nanoscale magnetic tunnel junctions
The magnetic stray field is an unavoidable consequence of ferromagnetic devices and
sensors leading to a natural asymmetry in magnetic properties. Such asymmetry is …
sensors leading to a natural asymmetry in magnetic properties. Such asymmetry is …
Size and voltage dependence of effective anisotropy in sub-100-nm perpendicular magnetic tunnel junctions
Magnetic tunnel junctions with perpendicular magnetic anisotropy are investigated using a
conductive atomic force microscope. The 1.23-nm Co 40 Fe 40 B 20 recording layer …
conductive atomic force microscope. The 1.23-nm Co 40 Fe 40 B 20 recording layer …
Atomistic investigation of the temperature and size dependence of the energy barrier of CoFeB/MgO nanodots
The balance between low power consumption and high efficiency in memory devices is a
major limiting factor in the development of new technologies. Magnetic random access …
major limiting factor in the development of new technologies. Magnetic random access …
Spin-orbit-torque switching in 20-nm perpendicular magnetic tunnel junctions
Magnetization switching utilizing the spin-orbit torque of heavy metals is a promising
alternative to spin-transfer torque for a faster and more energy-efficient write mechanism for …
alternative to spin-transfer torque for a faster and more energy-efficient write mechanism for …