This contribution reviews some of the latest achievements and challenges in thin-film silicon
photovoltaic (PV) technology based on amorphous and nanocrystalline silicon and their …

We review current models and propose new approaches for the production of silicon thin
films by low temperature plasma processes. Growth models have often been borrowed from …

Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped
amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline …

Phosphorous do** in the nc-Si network induces gradually reduced crystallinity; however,
preferential growth along< 220>-oriented crystallites promotes the columnar-like growth …

We report on the growth of microcrystalline silicon films from the dissociation of SiF 4/H 2/Ar
gas mixtures. For this growth chemistry, the formation of HF molecules provides a clear …

Probe diagnostics is used to determine the electron temperature and electron number
density in a low pressure inductively coupled plasma (ICP) ignited in the mixture of SiF 4, Ar …

Top‐gate and bottom‐gate microcrystalline‐silicon thin‐film transistors (TFTs) have been
produced at low temperature (150–250° C) by the standard radio‐frequency glow‐discharge …

We report on a particular growth mechanism for microcrystalline silicon thin films deposited
using SiF4/H2/Ar mixtures. The structure of the films is studied by in situ ellipsometry and …

This study explores the impact of hydrogen flow as a carrier gas on silicon oxycarbide thin
films produced via hot wire chemical vapor deposition (HWCVD) using tetraethyl …

Control of substrate temperature (TS) during plasma etching and film deposition using
fluorinated silicon gases has profound effects on etch and deposition rates as well as the …