Control and understanding of metal contacts to β-Ga2O3 single crystals: a review
H Kim - SN Applied Sciences, 2022 - Springer
Abstract Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …
[HTML][HTML] Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
Migration of Ga vacancies and interstitials in
Pathways and energy barriers for the migration of Ga vacancies (V Ga) and Ga interstitials
(Ga i) in β-Ga 2 O 3 are explored using hybrid functional calculations and the nudged elastic …
(Ga i) in β-Ga 2 O 3 are explored using hybrid functional calculations and the nudged elastic …
[HTML][HTML] Tutorial: Microscopic properties of O–H centers in β-Ga2O3 revealed by infrared spectroscopy and theory
β-Ga 2 O 3 is an ultrawide bandgap semiconductor that is attracting much attention for
applications in next-generation high-power, deep UV, and extreme-environment devices …
applications in next-generation high-power, deep UV, and extreme-environment devices …
Diffusion of dopants and impurities in β-Ga2O3
The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
[HTML][HTML] Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3
A Langørgen, C Zimmermann… - Journal of Applied …, 2022 - pubs.aip.org
The influence of heat treating n-type bulk β-Ga 2 O 3 in hydrogen (H 2) and argon (Ar)
gases on the presence of the defect level commonly labeled as E 1 was studied. Fourier …
gases on the presence of the defect level commonly labeled as E 1 was studied. Fourier …
Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3
Lightly n-type β-Ga 2 O 3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type
doped β-Ga 2 O 3 substrate was implanted with 1 MeV O ions to a fluence of 10 16 cm− 2 …
doped β-Ga 2 O 3 substrate was implanted with 1 MeV O ions to a fluence of 10 16 cm− 2 …
Classes of O–D centers in unintentionally and Fe-doped β-Ga2O3 annealed in a D2 ambient
β-Ga 2 O 3 has attracted much recent attention as a promising ultrawide bandgap
semiconductor. Hydrogen can affect the conductivity of β-Ga 2 O 3 through the introduction …
semiconductor. Hydrogen can affect the conductivity of β-Ga 2 O 3 through the introduction …
Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs
AY Polyakov, EB Yakimov, VI Nikolaev, AI Pechnikov… - Crystals, 2023 - mdpi.com
In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and
γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an …
γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an …
[HTML][HTML] On the possible nature of deep centers in Ga2O3
The electric field dependence of emission rate of the deep traps with level near E c− 0.6 eV,
so-called E1 traps, was studied by means of deep level transient spectroscopy …
so-called E1 traps, was studied by means of deep level transient spectroscopy …