The generation and transport parameters of charge carriers are critical for the evaluation of
optoelectronic devices. In this study, we alloyed CsPbI3 perovskite by partially substituting …

We propose an efficient method for reducing efficiency droop in InGaN QWs by redistributing
carrier localization via thermal annealing, which results in increased internal quantum …

Experiments have shown that the light-emission efficiency of indium gallium nitride [(In, Ga)
N] light-emitting diodes improves with increasing indium concentration. It is widely thought …

Numerical approach to account for the influence of randomly fluctuating potential on carrier
mobility in compound semiconductors with compositional disorder is developed and …

We present a detailed study on the optical properties of GaAsBi/GaAs multiple quantum well
structure, optimized for the active area for vertical-external-cavity surface-emitting lasers …

The width of polar InGaN quantum wells (QWs) is usually limited to a few nanometers to
ensure a sufficient overlap between the wave functions of the ground electron and hole …

Abstract [eng] This study was aimed at the theoretical description of the dynamics of
nonequilibrium carriers in inorganic crystalline compound scintillators and semiconductors …

Abstract [eng] Group III semiconductors have been relevant for applications in electronics
and optoelectronics for several decades, with many devices already realized and in …

GaN taikymas optoelektroniniuose prietaisuose yra plačiai paplitęs–jau daugiau nei 2
dešimtmečius turime šio junginio pagrindu gaminamus našius šviestukus (angl. light …