Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have
matured dramatically over the last few years, and many hundreds of thousands of devices …

Recently, there is a growing interest in Gallium Oxide (Ga 2 O 3) as a promising
semiconductor material for intended applications in RF, power electronics, and sensors with …

Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite,
Ga-face Al x Ga 1− x N/GaN/Al x Ga 1− x N and N-face GaN/Al x Ga 1− x N/GaN …

Two dimensional electron gases in Al x Ga 1− x N/GaN based heterostructures, suitable for
high electron mobility transistors, are induced by strong polarization effects. The sheet …

The rapid development of the RF power electronics requires the introduction of wide
bandgap material due to its potential in high output power density, high operation voltage …

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

The formation of the two-dimensional electron gas (2DEG) in unintentionally doped Al x Ga
1− x N/GaN (x⩽ 0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …