Abstract Beta-Gallium oxide (β-Ga 2 O 3) has emerged as a very feasible semiconductor
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …

Simultaneous implementation of photodetector and neuromorphic vision sensor (NVS) on a
single device faces a great challenge, due to the inherent speed discrepancy in their …

Although silicon carbide (SiC) is widely regarded as the material of choice for power
electronics, the development of several new applications on the SiC material platform is …

Abstract Gallium oxide (Ga 2 O 3) has attracted much attention for its ultra-wide band gap
and superior optoelectronic properties in the field of ultraviolet (UV) photodetectors …

Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-Ga2O3 have
significantly enhanced the functionality of electronic and optoelectronic devices, particularly …

As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows
excellent advantages in flexible and transferable structure fabrication, dissimilar materials …

Epitaxial graphene on SiC is the most promising substrate for the next generation 2D
electronics, due to the possibility to fabricate 2D heterostructures directly on it, opening the …

Wide‐bandgap semiconductors (WBGS) with energy bandgaps larger than 3.4 eV for GaN
and 3.2 eV for SiC have gained attention for their superior electrical and thermal properties …

In this report, we demonstrate direct epitaxial integration of β-Ga2O3 on a (400) oriented
silicon on insulator substrate toward deep-UV (DUV) optoelectronics. The 550 nm thick …

Flexible β-gallium oxide (β-Ga 2 O 3) crystal microstrips were fabricated by mechanical
exfoliation of the bulk single crystal. The polarized Raman spectra of the β-Ga 2 O 3 (1 0 0) …