Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook
HM Kim, DG Kim, YS Kim, M Kim… - International Journal of …, 2023 - iopscience.iop.org
Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …
semiconductors has grown. They offer high mobility, low off-current, low process …
Atomic layer deposition of conductive and semiconductive oxides
Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, do** …
conductivity and optical transparency can be modulated through material design (eg, do** …
Thin-film image sensors with a pinned photodiode structure
Image sensors made using silicon complementary metal–oxide–semiconductor technology
can be found in numerous electronic devices and typically rely on pinned photodiode …
can be found in numerous electronic devices and typically rely on pinned photodiode …
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking
For the first time, we propose a stackable vertical channel-all-around (CAA) In–Ga–Zn-O
field-effect transistor (IGZO FET) for high-density 4F 2 and long-retention 2T0C dynamic …
field-effect transistor (IGZO FET) for high-density 4F 2 and long-retention 2T0C dynamic …
Near-ideal top-gate controllability of InGaZnO thin-film transistors by suppressing interface defects with an ultrathin atomic layer deposited gate insulator
An ultrathin atomic-layer-deposited (ALD) AlO x gate insulator (GI) was implemented for self-
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …
On DRAM rowhammer and the physics of insecurity
AJ Walker, S Lee, D Beery - IEEE Transactions on Electron …, 2021 - ieeexplore.ieee.org
The dynamic random access memory (DRAM) disturb known as rowhammer (RH) has come
to dominate the insecurity of computing systems worldwide. Several studies have …
to dominate the insecurity of computing systems worldwide. Several studies have …
Cu2O p-type Thin-Film Transistors with Enhanced Switching Characteristics for CMOS Logic Circuit by Controlling Deposition Condition and Annealing in the N2 …
Cuprous oxide (Cu2O) p-type thin-film transistors (TFTs) can be practically applied for
complementary metal oxide semiconductor (CMOS) logic circuits, but the electrical …
complementary metal oxide semiconductor (CMOS) logic circuits, but the electrical …
Effect of channel thickness on performance of ultra-thin body IGZO field-effect transistors
MJ Kim, HJ Park, S Yoo, MH Cho… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Amorphous indium–gallium–zinc oxide (a-IGZO) is a promising channel material for an
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …
Develo** subthreshold-swing limit of PEALD In–Sn–Ga–O transistor via atomic-scaled Sn control
DH Lee, DG Kim, M Kim, S Uhm, T Kim… - ACS Applied …, 2022 - ACS Publications
The In–Sn–Ga–O (ITGO) thin-film transistor (TFT) is promising in that it possesses enhanced
electrical characteristics and stability because the tin (Sn) has large spherical s orbitals and …
electrical characteristics and stability because the tin (Sn) has large spherical s orbitals and …
Capacitorless DRAM cells based on high-performance indium-tin-oxide transistors with record data retention and reduced write latency
In this work, capacitorless memory cells using high mobility ultrathin indium-tin-oxide (ITO)
channel are successfully demonstrated, addressing the retention and latency challenges in …
channel are successfully demonstrated, addressing the retention and latency challenges in …