Atomic layer deposition of oxide semiconductor thin films for transistor applications: a review
The accelerated evolution of artificial intelligence (AI) and semiconductor technologies has
fostered a mutually reinforcing relationship, whereby each technology has contributed to the …
fostered a mutually reinforcing relationship, whereby each technology has contributed to the …
Highly C‐axis Aligned ALD‐InGaO Channel Improving Mobility and Thermal Stability for Next‐Generation 3D Memory Devices
SH Ryu, HM Kim, DG Kim… - Advanced Electronic …, 2024 - Wiley Online Library
A way to obtain highly ordered and thermally stable crystalline In–Ga–O (IGO) thin films is
reported by atomic layer deposition with novel bulky dimethyl [N‐(tert‐butyl)− 2‐methoxy‐2 …
reported by atomic layer deposition with novel bulky dimethyl [N‐(tert‐butyl)− 2‐methoxy‐2 …
Back-end-of-line-compatible scaled InGaZnO transistors by atomic layer deposition
In this work, we report on back-end-of-line (BEOL)-compatible InGaZnO indium gallium zinc
oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including …
oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including …
Influence of indium do** on electrical performance of gallium oxide thin-film transistors
L Ji, X Chen, X Su, J Wan, Z Tu, H Wu, C Liu - Applied Physics Letters, 2023 - pubs.aip.org
In the field of oxide semiconductor thin-film transistors (TFTs), the occurrence of charge
trap** in the gate dielectric and interfaces presents significant challenges to their …
trap** in the gate dielectric and interfaces presents significant challenges to their …
Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (InxGa1–x)2O3 Solar-Blind Photodetectors
Rising wide bandgap semiconductor gallium oxide (Ga2O3) displays huge potential in
performing solar-blind photodetection, with constraint in narrow detection wavebands in …
performing solar-blind photodetection, with constraint in narrow detection wavebands in …
Universal PBTI Relaxation on the Negative VTH Shift in Oxide Semiconductor Transistors and New Insights
In this work, the positive bias temperature instability (PBTI) degradation of ZnO transistors by
atomic layer deposition (ALD) is systematically investigated by using an extended measure …
atomic layer deposition (ALD) is systematically investigated by using an extended measure …
Electrostatic damage influenced by bottom gate-like effects in flexible organic light-emitting diodes
Z **ong, J Gu, D **ang - IEEE Electron Device Letters, 2023 - ieeexplore.ieee.org
Electrostatic damage has been shown to be a common phenomenon in display applications
especially in flexible organic light-emitting diodes (OLEDs). Herein, to analyze the damage …
especially in flexible organic light-emitting diodes (OLEDs). Herein, to analyze the damage …
Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination
A low‐thermal‐budget fabrication approach is developed to realize high‐performance
fluorine‐doped indium oxide (In2O3: F) thin‐film transistors (TFTs) with remarkable bias …
fluorine‐doped indium oxide (In2O3: F) thin‐film transistors (TFTs) with remarkable bias …
Highly stable short channel ultrathin atomic layer deposited indium zinc oxide thin film transistors with excellent electrical characteristics
YK Liang, WL Li, JY Zheng, YL Lin… - IEEE Electron …, 2023 - ieeexplore.ieee.org
The high-performance atomic layer deposited (ALD) ultrathin (~ 2 nm) amorphous InZnO (-
IZO, indium: Zinc≈ 6: 4) channel thin-film transistors (TFTs) with a short channel length () of …
IZO, indium: Zinc≈ 6: 4) channel thin-film transistors (TFTs) with a short channel length () of …
Density Functional Theory Study of Polarization-Induced Electron Confinement by Dilute Boron Alloying in ε-Ga2O3 Nanometer-Thick Film for High Electron Mobility …
Y Wang, J Cao, Y Liao, C Zhang, Z **e… - ACS Applied Nano …, 2024 - ACS Publications
Density functional theory computations were utilized to quantify the polarization discontinuity
of 1.8 μC/cm2 in ε-(B0. 0625Ga0. 9375) 2O3/ε-Ga2O3 heterostructure. The polarization …
of 1.8 μC/cm2 in ε-(B0. 0625Ga0. 9375) 2O3/ε-Ga2O3 heterostructure. The polarization …