Magnetoelectric coupling phenomenon in multiferroics has attracted considerable research
activities in the last decade due to its wide range of applications in spintronic, data storage …

Magnetoelectric effect enables controlling magnetism with an electric field or controlling
polarization remotely with a magnetic field, without involving any driving electric currents …

Energy-efficient spintronic technology holds tremendous potential for the design of next-
generation processors to operate at terahertz frequencies. Femtosecond photoexcitation of …

Room-temperature skyrmions in magnetic multilayers are considered to be promising
candidates for the next-generation spintronic devices. Several approaches have been …

The abnormal self-assembly of β-amyloid (Aβ) peptides and their deposition in the brain is a
major pathological feature of Alzheimer's disease (AD), the most prevalent chronic …

Epitaxial films may be released from growth substrates and transferred to structurally and
chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides …

Field induced domain wall displacements define ferroelectric/ferroelastic hysteresis loops,
which are at the core of piezoelectric, magnetoelectric and memristive devices. These …

To overcome a bottleneck in spintronic applications such as those of ultralow-power
magnetoresistive random-access memory devices, the electric-field control of magnetization …

The full E-field control of multiferroic interfacial magnetism is a long-standing challenge for
micro-electromechanical systems (MEMS) and has the potential to transform electronics …

Electric-field control of magnetism is significant for the next generation of large-capacity and
low-power data storage technology. In this regard, the renaissance of a multiferroic …