Near-junction thermal managements of electronics
Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …
decades but there are still many challenges in this area. This chapter provides a …
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
Near-junction phonon thermal spreading in GaN HEMTs: A comparative study of simulation techniques by full-band phonon Monte Carlo method
Accurate thermal simulation is essential for the near-junction thermal management and
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …
Bias dependence of non-Fourier heat spreading in GaN HEMTs
In this article, self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
[HTML][HTML] Thermal conductivity of ScxAl1− xN and YxAl1− xN alloys
DQ Tran, F Tasnádi, A Žukauskaitė, J Birch… - Applied Physics …, 2023 - pubs.aip.org
Owing to their very large piezoelectric coefficients and spontaneous polarizations,(Sc, Y) x
Al 1− x N alloys have emerged as a new class of III-nitride semiconductor materials with …
Al 1− x N alloys have emerged as a new class of III-nitride semiconductor materials with …
Spectral thermal spreading resistance of wide-bandgap semiconductors in ballistic-diffusive regime
To develop efficient thermal management strategies for wide-bandgap (WBG)
semiconductor devices, it is essential to have a clear understanding of the heat transport …
semiconductor devices, it is essential to have a clear understanding of the heat transport …
Thermal analysis of GaN HEMTs using nongray multi-speed phonon lattice Boltzmann method under Joule heating effect
Abstract Gallium Nitride (GaN) high electron mobility transistors (HEMTs) exhibit superior
electrical properties for power and radio frequency applications, but performance is …
electrical properties for power and radio frequency applications, but performance is …
Thermal conductivity of epitaxial layers
DQ Tran, RD Carrascon, M Iwaya, B Monemar… - Physical Review …, 2022 - APS
Al x Ga 1− x N ternary alloys are emerging ultrawide band gap semiconductor materials for
high-power electronics applications. The heat dissipation, which mainly depends on the …
high-power electronics applications. The heat dissipation, which mainly depends on the …
On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure
J Chang, Y Yin, J Du, H Wang, H Li… - IEEE Electron …, 2023 - ieeexplore.ieee.org
An on-chip integrated temperature sensor based on a-GaN/AlGaN/GaN heterostructure is
demonstrated. The sensor consists of a two-dimensional-electron-gas (2DEG) resistor and a …
demonstrated. The sensor consists of a two-dimensional-electron-gas (2DEG) resistor and a …
High-temperature HEMT model
N Sahebghalam, M Shalchian… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Taking into account the impact of self-heating and temperature rise effects, this work
presents a physics-based analytical model for HEMTs, operating continuously from room …
presents a physics-based analytical model for HEMTs, operating continuously from room …