Sha** high-performance wearable robots for human motor and sensory reconstruction and enhancement

H **a, Y Zhang, N Rajabi, F Taleb, Q Yang… - Nature …, 2024 - nature.com
Most wearable robots such as exoskeletons and prostheses can operate with dexterity,
while wearers do not perceive them as part of their bodies. In this perspective, we contend …

An L-and C-band radiometer utilizing distributed active hot and cold loads with 156% fractional bandwidth

X Bi, Z Feng, S Guan, Z Cao, Y Mei, J Li… - … on microwave theory …, 2021 - ieeexplore.ieee.org
This article presents an-and-band radiometer with integrated wideband active hot and cold
loads (AHCLs). By seamlessly integrating the distributed low noise amplifying unit and the …

An Interstage-Reflectionless V-Band Radiometer With Capacitor-Reused Absorptive Matching in 0.13-μm SiGe BiCMOS

X Bi, Z Cao, Z Feng, C Sheng… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
A-band heterodyne radiometer in SiGe BiCMOS employing a capacitor-reused absorptive
inter-stage matching network is firstly proposed, which prevents from employing a circulator …

CAD modeling of mm-wave circuits incorporating avalanche noise diodes

G Simoncini, D Dal Maistro, F Alimenti - IEEE Access, 2022 - ieeexplore.ieee.org
This paper proposes, for the first time, a completely stand alone avalanche diode model
based on a C++ code. The code, implemented within the Advanced Design Systems (ADS) …

A Cryogenic 561 μW Ultralow-Power 56–62 GHz Low Noise Amplifier in 130-nm SiGe HBTs

B Peng, X **, K Aufinger… - IEEE Microwave and …, 2023 - ieeexplore.ieee.org
An ultralow-power millimeter-wave (mm-wave) cryogenic low noise amplifier (LNA) has
been designed and fabricated in a 130 nm SiGe HBT technology. Measurements at 4.3 K …

[HTML][HTML] Performance assessment of w-band radiometers: Direct versus heterodyne detections

JP Pascual, B Aja, E Villa, JV Teran, L de la Fuente… - Electronics, 2021 - mdpi.com
W-Band radiometers using intermediate frequency down-conversion (super-heterodyne)
and direct detection are compared. Both receivers consist of two W-band low noise …

Fully integrated avalanche noise sources: Reproducibility and stability assessment

G Simoncini, V Palazzi, G Orecchini… - IEEE Microwave and …, 2023 - ieeexplore.ieee.org
Avalanche noise diodes have recently been demonstrated in standard Si technologies such
as CMOS and SiGe BiCMOS processes and used to design fully integrated noise sources …

Asymmetric CMOS switch for Dicke radiometer in millimeter-wave imaging system

JH Yoon, HN Lee, UG Choi, JR Yang - Microelectronics Journal, 2024 - Elsevier
An asymmetric Dicke switch implemented in bulk complementary metal-oxide-
semiconductor (CMOS) technology is proposed to achieve high isolation and low insertion …

Front-End Design in SiGe BiCMOS Technology for V-band High Resolution Imaging

L Tesi, G Collodi, A Cidronali - … on Metrology for Industry 4.0 & …, 2024 - ieeexplore.ieee.org
This paper presents a front-end chain with variable gain suitable for high resolution imaging
applications in V-band, based in SiGe BiCMOS technology, with operative frequency from …

Fully Integrated Built-In Self Test of Millimeter-Wave LNA based on Avalanche Noise Diodes in 130 nm SiGe BiCMOS Technology

G Simoncini, V Palazzi, G Orecchini… - 2023 18th European …, 2023 - ieeexplore.ieee.org
This contribution demonstrates, for the first time, on-chip Built-In Self Test (BIST) circuits
based on avalanche noise diodes, a class of devices that are recently developed up to …