Interconnect resistance and reliability have emerged as critical factors limiting the
performance of advanced CMOS circuits. With the slowdown of transistor scaling …

Ruthenium is emerging as a promising candidate to replace copper in highly integrated
electronics by enabling barrierless metallization in ultrathin interconnects. From this …

The graphene-all-around (GAA) structure has been verified to grow directly at 380° C using
hot-wire chemical vapor deposition, within the thermal budget of the back end of the line …

Graphene-based interconnects are considered promising replacements for traditional
copper (Cu) interconnect due to their great electric properties. In this article, an interconnect …

The epitaxy of III-nitrides on metallic substrates is competitive due to the advantages of
vertical carrier injection, enhanced heat dissipation, and flexible application in various III …

The epitaxy of AlGaN on metallic substrates exhibits numerous advantages including
flexibility, vertical carrier injection, and enhanced heat dissipation for optoelectronic devices; …

SRAM performance is highly dominated by interconnects as technology scales down
because of the significant parasitic resistance and capacitance in the interconnect. This …

In this theoretical study, we assess the impact of a graphene cap** layer on the resistivity
of defective, extremely scaled interconnects. We investigate the effect of graphene cap** …

Promising interconnect materials continue to emerge and are considered as potential
replacements for Cu interconnects. In this paper, an intermediate-length interconnect …

For on-chip SRAM, a major portion of delay and energy is contributed by the H-Tree
interconnects. In this paper, we propose an E-Tree interconnect technology to minimize the …