The prospect of enhanced device performance from III–V materials has been recognized for
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …

The goal of this article is to provide an overview of the state of knowledge regarding the
Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An …

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors,
from both a fundamental and a technological viewpoint, summarizing the latest research …

The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …

The interactions of oxygen atoms on the GaAs (001)-β 2 (2× 4) surface and the passivation
of oxidized GaAs (001)-β 2 (2× 4) surface were studied by density functional theory. The …

The method of surface preparation on n-type GaAs, even with the presence of an
amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of …

Contact between two oxide semiconductor grains different in work function (hetero-contact)
is characterized by the generation of contact potential, which is sensitive to gases. The …

A systematic experimental and theoretical study was performed to determine the causes of
oxide-induced Fermi level pinning and unpinning on Ga As (001)-c (2× 8)∕(2× 4)⁠ …

The surface bonding arrangement in nearly all the confirmed reconstructions of InAs (001)
and GaAs (001) have only two types of hybridization present. Either the bonds are similar to …

A general model of the density of interface states at III–V oxide interfaces is presented. The
interface states arise from the native defects, such as Ga or As dangling bonds and Ga–Ga …