A Review on Development and Optimization of Microheaters for High-Temperature In Situ Studies

RG Spruit, JT Van Omme… - Journal of …, 2017 - ieeexplore.ieee.org
Microelectromechanical systems (MEMS)-based sample carriers became a breakthrough for
in situ inspection techniques, especially in transmission electron microscopy where the …

High-Performance Multiwavelength GaNAs Single Nanowire Lasers

M Jansson, VV Nosenko, Y Torigoe, K Nakama… - ACS …, 2024 - ACS Publications
In this study, we report a significant enhancement in the performance of GaNAs-based
single nanowire lasers through optimization of growth conditions, leading to a lower lasing …

In-situ transmission electron microscopy imaging of aluminum diffusion in germanium nanowires for the fabrication of Sub-10 nm Ge quantum disks

MA Luong, E Robin, N Pauc, P Gentile… - ACS Applied Nano …, 2020 - ACS Publications
The thermal activated solid state reaction forming aluminum–germanium nanowire (NW)
heterostructures is a promising system as very sharp and well-defined one-dimensional …

Kinetics of Au–Ga droplet mediated decomposition of GaAs Nanowires

M Tornberg, D Jacobsson, AR Persson… - Nano Letters, 2019 - ACS Publications
Particle-assisted III–V semiconductor nanowire growth and applications thereof have been
studied extensively. However, the stability of nanowires in contact with the particle and the …

[HTML][HTML] Electrical resistivity and microstructural evolution of electrodeposited Co and Co-W nanowires

E Yoo, JH Moon, YS Jeon, Y Kim, JP Ahn… - Materials …, 2020 - Elsevier
As the design rule of the integrated circuits is decreasing to a 10 nm scale, the total electrical
resistance of conventional Cu metallization increases rapidly. New conducting materials …

In situ TEM observation of the vapor–solid–solid growth of< 001 [combining macron]> InAs nanowires

Q Sun, D Pan, M Li, J Zhao, P Chen, W Lu, J Zou - Nanoscale, 2020 - pubs.rsc.org
In situ transmission electron microscopy characterization is a powerful method in
investigating the growth mechanism of catalyst-induced semiconductor nanowires. By …

Modifying the interface edge to control the electrical transport properties of nanocontacts to nanowires

AM Lord, QM Ramasse, DM Kepaptsoglou… - Nano Letters, 2017 - ACS Publications
Selecting the electrical properties of nanomaterials is essential if their potential as
manufacturable devices is to be reached. Here, we show that the addition or removal of …

Dynamic Nanomaterials Phenomena Investigated with in Situ Transmission Electron Microscopy: A Nano Letters Virtual Issue

MT McDowell, KL Jungjohann, U Celano - Nano Letters, 2018 - ACS Publications
To engineer nanomaterials for various applications, it is critical to understand their dynamic,
time-dependent behavior under realistic stimuli and environmental conditions. Processes …

Single GaAs nanowire/graphene hybrid devices fabricated by a position-controlled microtransfer and an imprinting technique for an embedded structure

A Mukherjee, H Yun, DH Shin, J Nam… - … applied materials & …, 2019 - ACS Publications
We developed a new technique to fabricate single nanowire devices with reliable
graphene/nanowire contacts using a position-controlled microtransfer and an embedded …

Atomic scale dynamics of contact formation in the cross-section of InGaAs nanowire channels

R Chen, KL Jungjohann, WM Mook, J Nogan… - Nano …, 2017 - ACS Publications
Alloyed and compound contacts between metal and semiconductor transistor channels
enable self-aligned gate processes which play a significant role in transistor scaling. At …