Numerical analysis of terahertz emissions from an ungated HEMT using full-wave hydrodynamic model
In this paper, we show how plasma-wave instability in an asymmetrically biased ungated
InGaAs high-electron mobility transistor (HEMT) leads to terahertz emissions. Numerical …
InGaAs high-electron mobility transistor (HEMT) leads to terahertz emissions. Numerical …
Compact terahertz SPICE model: Effects of drude inductance and leakage
X Liu, K Dovidenko, J Park, T Ytterdal… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
We describe an improved compact SPICE/ADS model validated for the terahertz (THz)
frequency range in a large dynamic range. The model validation was done by comparing the …
frequency range in a large dynamic range. The model validation was done by comparing the …
Terahertz spectroscopy of plasma waves in high electron mobility transistors
We report on systematic measurements of resonant plasma waves oscillations in several
gate-length InGaAs high electron mobility transistors (HEMTs) and compare them with …
gate-length InGaAs high electron mobility transistors (HEMTs) and compare them with …
Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors
We report on reflective electro-optic sampling measurements of terahertz emission from
nanometer-gate-length InGaAs-based high electron mobility transistors. The room …
nanometer-gate-length InGaAs-based high electron mobility transistors. The room …
Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor
H Marinchio, L Chusseau, J Torres, P Nouvel… - Applied Physics …, 2010 - pubs.aip.org
A method for the heterodyne detection of terahertz (THz) signals is proposed. A high
electron mobility transistor is used as a nonlinear element, while the optical beating of two …
electron mobility transistor is used as a nonlinear element, while the optical beating of two …
Investigation of transport modeling for plasma waves in THz devices
Z Kargar, T Linn, D Ruić… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
The performance of electronic devices for the detection and generation of THz waves might
be potentially improved by resonances or instabilities due to plasma waves. The analytical …
be potentially improved by resonances or instabilities due to plasma waves. The analytical …
Terahertz emission induced by optical beating in nanometer-length field-effect transistors
We report on photo-induced terahertz radiation with a high spectral purity generated by a
submicron sized InGaAs-based high-electron-mobility transistor. The emission peak is due …
submicron sized InGaAs-based high-electron-mobility transistor. The emission peak is due …
THz plasma wave instability in field effect transistor with electron diffusion current density
DU Hongmei, L Zhang, LI Dongao - Plasma Science and …, 2018 - iopscience.iop.org
The plasma wave instability in rectangle field effect transistors (FETs) is studied with electron
diffusion current density by quantum hydrodynamic model in this paper. General dispersion …
diffusion current density by quantum hydrodynamic model in this paper. General dispersion …
Enhanced THz detection through phase-controlled current response in field-effect transistors
A field effect transistor can be used as a nonlinear element for the resonant detection of
incident terahertz (THz) radiation at room temperature. The excitation of the plasma modes …
incident terahertz (THz) radiation at room temperature. The excitation of the plasma modes …
External excitation of hybrid plasma resonances in a gated semiconductor slab: An analytical study
We derive at first-order the carrier and velocity conservation equations and a pseudo-2D
(P2D) Poisson equation in order to obtain an analytical model suitable for the study of the …
(P2D) Poisson equation in order to obtain an analytical model suitable for the study of the …