Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …
scalable memory technologies are being researched for data storage and data-driven …
7-levels-stacked nanosheet GAA transistors for high performance computing
S Barraud, B Previtali, C Vizioz… - … IEEE symposium on …, 2020 - ieeexplore.ieee.org
In this paper, we experimentally demonstrate, for the first time, gate-all-around (GAA)
nanosheet transistors with a record number of stacked channels. Seven levels stacked …
nanosheet transistors with a record number of stacked channels. Seven levels stacked …
Challenges and opportunities for HfOX based resistive random access memory
YS Chen, HY Lee, PS Chen, CH Tsai… - 2011 International …, 2011 - ieeexplore.ieee.org
The binary oxide based resistive memories showing superior electrical performances on the
resistive switching are reviewed in this paper. The status and challenges of the HfO X based …
resistive switching are reviewed in this paper. The status and challenges of the HfO X based …
Variability of resistive switching memories and its impact on crossbar array performance
A Chen, MR Lin - 2011 International Reliability Physics …, 2011 - ieeexplore.ieee.org
Metal oxide based resistive switching memories (also known as RRAM for Resistive
Random Access Memory) often show large variability, due to the stochastic nature of the …
Random Access Memory) often show large variability, due to the stochastic nature of the …
Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory
To satisfy strict requirements of storage-class memory, a bipolar TaO x/TiO 2 RRAM has
been developed. Numerous highly desired features, including:(1) extremely high endurance …
been developed. Numerous highly desired features, including:(1) extremely high endurance …
High speed unipolar switching resistance RAM (RRAM) technology
Y Hosoi, Y Tamai, T Ohnishi, K Ishihara… - 2006 International …, 2006 - ieeexplore.ieee.org
We have successfully achieved high speed (~ 50 ns) unipolar operation in RRAM devices
comprised of titanium oxynitride (TiON) combined with a control resistor connected in series …
comprised of titanium oxynitride (TiON) combined with a control resistor connected in series …
Resistive switching characteristics of MnOx-based ReRAM
The resistive switching characteristics of MnO x thin film were investigated for resistive
random access memory (ReRAM) applications. The devices in the form of metal–insulator …
random access memory (ReRAM) applications. The devices in the form of metal–insulator …
Ultrathin (<10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
We report, for the first time, the novel concept of ultrathin (∼ 10nm) W/NbO x/Pt device with
both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS …
both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS …
Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window …
We report a novel self-compliant and self-rectifying resistive switching memory cell, with
area-scalable switching currents, featuring a set current density of~ 5nA/nm 2 (<; 9uA for a …
area-scalable switching currents, featuring a set current density of~ 5nA/nm 2 (<; 9uA for a …
Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications
4F 2 selector-less crossbar array 2Mb ReRAM test chip with 54nm technology has been
successfully integrated for high cell efficiency and high density memory applications by …
successfully integrated for high cell efficiency and high density memory applications by …