Advanced optoelectronic devices for neuromorphic analog based on low‐dimensional semiconductors

X Wang, Y Zong, D Liu, J Yang… - Advanced Functional …, 2023 - Wiley Online Library
Neuromorphic systems can parallelize the perception and computation of information,
making it possible to break through the von Neumann bottleneck. Neuromorphic …

The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms

Y Shen, Z Dong, Y Sun, H Guo, F Wu, X Li… - Advanced …, 2022 - Wiley Online Library
Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …

Anisotropic heavy-metal-free semiconductor nanocrystals: Synthesis, properties, and applications

L Liu, B Bai, X Yang, Z Du, G Jia - Chemical Reviews, 2023 - ACS Publications
Heavy-metal (Cd, Hg, and Pb)-containing semiconductor nanocrystals (NCs) have been
explored widely due to their unique optical and electrical properties. However, the toxicity …

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

Z Guo, R Cao, H Wang, X Zhang, F Meng… - National Science …, 2022 - academic.oup.com
Abstract Two-dimensional (2D) indium selenide (InSe) has been widely studied for
application in transistors and photodetectors, which benefit from its excellent optoelectronic …

Anisotropic low‐dimensional materials for polarization‐sensitive photodetectors: From materials to devices

J Wang, C Jiang, W Li, X **ao - Advanced Optical Materials, 2022 - Wiley Online Library
Polarization‐sensitive detectors based on anisotropic low‐dimensional materials have been
widely investigated in recent years. Some low‐dimensional materials possess anisotropy …

2D material‐based photodetectors for infrared imaging

Z Cheng, T Zhao, H Zeng - Small Science, 2022 - Wiley Online Library
As a dynamic research field, infrared (IR) detection and imaging presents broad prospect in
spectra‐chemistry, biomedicine, and artificial intelligence. Due to the excellent properties …

In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects

S Zhao, B Dong, H Wang, H Wang, Y Zhang… - Nanoscale …, 2020 - pubs.rsc.org
Low-symmetry layered materials such as black phosphorus (BP) have been revived recently
due to their high intrinsic mobility and in-plane anisotropic properties, which can be used in …

A current–voltage model for double Schottky barrier devices

A Grillo, A Di Bartolomeo - Advanced Electronic Materials, 2021 - Wiley Online Library
Schottky barriers (SBs) are often formed at the semiconductor/metal contacts and affect the
electrical behavior of semiconductor devices. In particular, SBs are playing a major role in …

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi2S3 Nanowire

W Yang, J Yang, K Zhao, Q Gao, L Liu… - Advanced …, 2021 - Wiley Online Library
With the increasing demand for detection accuracy and sensitivity, dual‐band polarimetric
image sensor has attracted considerable attention due to better object recognition by …

High Performance Self‐Driven Polarization‐Sensitive Photodetectors Based on GeAs/InSe Heterojunction

J **ong, Y Sun, L Wu, W Wang, W Gao… - Advanced Optical …, 2021 - Wiley Online Library
The ability to detect linearly polarized light is essential in the field of angle‐dependent
optoelectronics and polarization optical applications. To date, most polarization‐sensitive …