Semiconductor‐Nanocrystals‐Based White Light‐Emitting Diodes
In response to the demands for energy and the concerns of global warming and climate
change, energy efficient and environmentally friendly solid‐state lighting, such as white light …
change, energy efficient and environmentally friendly solid‐state lighting, such as white light …
Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy
P Dhingra, AJ Muhowski, BD Li, Y Sun… - Journal of Applied …, 2023 - pubs.aip.org
III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest
due to their unique characteristics, including low threshold current density (J th), low …
due to their unique characteristics, including low threshold current density (J th), low …
Nonequilibrium carrier dynamics in self-assembled quantum dots
M Geller - Applied Physics Reviews, 2019 - pubs.aip.org
Self-assembled quantum dots are still one of the best model systems for artificial atoms in a
solid-state environment, where the electronic states can be accessed by electrical and …
solid-state environment, where the electronic states can be accessed by electrical and …
Prediction of total antioxidant activity of Prunella L. species by automatic partial least square regression applied to 2-way liquid chromatographic UV spectral images
Four different data representations were evaluated for the determination of the total
antioxidant activities of four different Prunella L. species, which are Prunella vulgaris …
antioxidant activities of four different Prunella L. species, which are Prunella vulgaris …
A nanomembrane-based wavelength-tunable high-speed single-photon-emitting diode
We demonstrate an all-electrically operated wavelength-tunable on demand single-photon
source for the first time. The device consists of a light-emitting diode in the form of a …
source for the first time. The device consists of a light-emitting diode in the form of a …
Low-density arrays of ultra-small InAs nanostructures obtained by two-stage arsenic exposure during droplet epitaxy
SV Balakirev, DV Kirichenko, NE Chernenko… - Applied Surface …, 2022 - Elsevier
In order to consider quantum dots as single objects and to use them in modern electronic
and photonic devices, they must be well-isolated from each other and have an appropriate …
and photonic devices, they must be well-isolated from each other and have an appropriate …
InAs/GaAs quantum dot intermixing induced by proton implantation
Y Ji, W Lu, G Chen, X Chen, Q Wang - Journal of applied physics, 2003 - pubs.aip.org
Because of increasing interest in their fundamental physics and novel device applications,
great effort has been devoted to the fabrication and exploitation of self-assembled In (Ga) As …
great effort has been devoted to the fabrication and exploitation of self-assembled In (Ga) As …
Group-III vacancy induced quantum dot interdiffusion
The impact of group-III vacancy diffusion, generated during dielectric cap induced
intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs∕ …
intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs∕ …
Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing
L Peters, D Sergeev, C Margenfeld, M Müller… - Journal of Applied …, 2023 - pubs.aip.org
High-temperature annealing (HTA) is one of the most promising techniques to produce high-
quality, cost-efficient AlN templates for further epitaxial growth of AlGaN devices …
quality, cost-efficient AlN templates for further epitaxial growth of AlGaN devices …